Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

Abstract

Abstract-Molecular dynamics simulation of the reactions between gaseous fluorine atoms and silicon are performed using the development Tersoff-Brenner potential at the temperature from 500K to 1200K. The simulation results show that the Si surface temperature significantly affects the F etching. For instance, as the surface temperature rises up, the numbers of F atoms deposited on and scattered by Si surface decrease, at the same times, the number of the sputtering fluorine atoms and the reactive F atoms with surface to produce volatile compounds increase. In addition, the quantity of the F etched Si atoms increased with an increase of the surface temperature.

Molecular dynamics simulation on selective etching of α -quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process

“…A study by Kim et al 12 found that the preferential sputtering ratio was 1:5.4 at an incident angle φ ¼ 75 deg. 21,22 In this study, Argon atoms were in the form of an inert gas, thus they do not form any bond. 21,22 In this study, Argon atoms were in the form of an inert gas, thus they do not form any bond.…”