2020
DOI: 10.1016/j.apsusc.2020.146697
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Molecular geometry influencing thermal-based nucleophilic reactions on silicon (111) hydride surfaces

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Cited by 7 publications
(7 citation statements)
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“…The XPS deconvolution of the 3-Butyn-1-ol sample for thermal excitation showed a single peak at 101.4 eV that was characteristic of Si-O-X [45]. The presence of a single peak can be explained by the concentration level of 3-Butyn-1-ol (10% concentration in this study).…”
Section: Resultssupporting
confidence: 45%
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“…The XPS deconvolution of the 3-Butyn-1-ol sample for thermal excitation showed a single peak at 101.4 eV that was characteristic of Si-O-X [45]. The presence of a single peak can be explained by the concentration level of 3-Butyn-1-ol (10% concentration in this study).…”
Section: Resultssupporting
confidence: 45%
“…The presence of a single peak can be explained by the concentration level of 3-Butyn-1-ol (10% concentration in this study). As demonstrated in the past [45], as the concentration of 3-Butyn-1-ol increased, the spectrum tended to lose its Si2p peaks and the reaction proceeded through the nucleophile OH to form Si-O-C bonds at the surface. On the contrary, for the sonochemical reaction, three distinct peaks were successfully fitted during the deconvolution.…”
Section: Resultsmentioning
confidence: 83%
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