Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current experiments the SOI originates predominantly from extrinsic fields, induced by finite size effects and applied gate voltages. The dependence of the topological transition in these devices on microscopic details makes scaling to a large number of devices difficult unless a material with dominant intrinsic bulk SOI is used. Here we show that wires made of certain ordered alloys InAs1−xSbx have spin splittings up to 20 times larger than those reached in pristine InSb wires. In particular, we show this for a stable ordered CuPt-structure at x = 0.5, which has an inverted band ordering and realizes a novel type of a topological semimetal with triple degeneracy points in the bulk spectrum that produce topological surface Fermi arcs. Experimentally achievable strains can drive this compound either into a topological insulator phase, or restore the normal band ordering making the CuPt-ordered InAs0.5Sb0.5 a semiconductor with a large intrinsic linear in k bulk spin splitting.In recent years, a range of topological phases have been realized in materials, ranging from topological insulators [1, 2] (TIs) and semimetals [3][4][5][6] (TSMs) to superconductors [7, 8] (TSCs). The non-trivial topology of the ground state wavefunctions in these phases causes a variety of phenomena in such materials ranging from topologically protected metallic surface or edge states in TIs [1, 2] and Fermi arcs and anomalous magnetotransport in TSMs [4,[9][10][11], to quasiparticles with nonAbelian particle statistics [12][13][14][15][16][17][18][19] in TSCs, which could be used for topological quantum computation [20,21].Arguably the simplest scheme for realizing nonAbelian statistics in a solid-state device is based on manipulating Majorana zero modes (MZMs) in networks of semiconductor wires. MZMs were predicted to appear at the ends of spin-orbit coupled wires subject to a parallel magnetic field, proximity coupled to an s-wave superconductor. Experimental observations, consistent with the theory, were reported for InAs and InSb zincblende nanowires [19,[22][23][24].The stability of MZMs in such a setup depends greatly on the size of the spin-orbit splitting (SOS) of the conduction band. SOS is very small in bulk zincblende semiconductors [25] and the realization of the MZMs thus relies on the externally induced Rashba SOS [26], which is estimated to be of the order of 1 meV [27,28]. This value is very small compared to the bulk splitting in some recently discovered compounds [29][30][31][32]. However, most of these materials are not suitable for realizing MZMs within the above scenario, while for others such experiments appear to be challenging. It is thus desirable to understand if large values of bulk SOS can be achieved within the III-V materials class, used in most experiments at this time. A bulk SOS dom...