Monitoring and Purge Parameters of Ammonia for the Front Opening Unified Pod (FOUP)

Yoo, Seoung-Kyo; Shiue, Angus; Lee, Tzong-Shing; Hu, Shih−Cheng; Lee, Eungsun; Ju, Younghee

doi:10.1166/asl.2012.4239

Cited by 3 publications

(1 citation statement)

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“…To prevent this kind of contamination by exposure to the air, wafers on which chip is formed are stored or moved in the enclosed carrier called front opening unified pod (FOUP) and particles or AMCs remaining on wafers may diffuse into FOUP and contaminate it (Frickinger et al, 2000;Hu et al, 2005;Hu et al, 2009). Particles or AMCs adsorb onto inside of FOUP which can contaminate other wafers and FOUPs like a "contagious disease" and therefore various researches on FOUP cleaning and purge are in progress (Hu and Tsao, 2006;Hu et al, 2007;Yoo et al, 2012).…”

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confidence: 99%

Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad

Kwon

Hwang

Kim

et al. 2017

Aerosol Air Qual. Res.

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We analyzed defective bonding pad in various ways and determined the causes of defects that boosts oxidation of aluminium by fluoride residue on surface of pad with moisture. Additionally, we compared and evaluated methods to minimize pad defects in aspects such as etching and wafer storage environment. In case of wafers after pad open etching process using common CF 4 stored in FOUP, the concentration of fluoride ions in FOUP was 230 ng L -1 and it decreased down to 170 ng L -1 when Ar sputtering step was added after using CF 4 . Also under the same condition, fluoride ion concentration in FOUP decreased down to 20 ng L -1 when nitrogen purge was introduced for 10 minutes to the FOUP where wafers were stored and the moisture also decreased from 40% before purge to 10% after purge. As a result of observation on pad surface after storing wafers in FOUP for 120 hours under each condition, negligible amount of defects were found when nitrogen was purged. Therefore, we conclude that defects on pad were generated by existing fluoride ions after etching process and moisture in the air.

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