2012
DOI: 10.1016/j.bios.2011.10.005
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Monitoring extracellular K+ flux with a valinomycin-coated silicon nanowire field-effect transistor

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Cited by 37 publications
(11 citation statements)
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“…In addition, ISFET sensors can be fabricated in large numbers using standard lithographic processes. Recent studies have demonstrated the use of ISFETs for measuring ion flux from single cells plated and grown on coated (Straub et al, 2001; Wrobel et al, 2005; Chang et al, 2012) or uncoated (Yu et al, 2007; Gebinoga et al, 2010; Sakata et al, 2012) sensors. However, the application of ISFETs in multi-well plate, parallel measurement configurations for ion efflux analysis has not been determined.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, ISFET sensors can be fabricated in large numbers using standard lithographic processes. Recent studies have demonstrated the use of ISFETs for measuring ion flux from single cells plated and grown on coated (Straub et al, 2001; Wrobel et al, 2005; Chang et al, 2012) or uncoated (Yu et al, 2007; Gebinoga et al, 2010; Sakata et al, 2012) sensors. However, the application of ISFETs in multi-well plate, parallel measurement configurations for ion efflux analysis has not been determined.…”
Section: Introductionmentioning
confidence: 99%
“…The abnormal permeability of K + ions was suggested to be related to neural degeneration, diabetes mellitus, and epilepsy (MacDonald et al 2001;Jentsch 2000;Singh et al 1998). K a was determined to be 5,974 ± 115 M −1 , which is significantly higher than the apparent association constants for VAL binding to Li + , Na + , and Cs + ions (Chang et al 2012). To detect K + ions, a polyvinyl chloride (PVC) membrane, embedded with valinomycin (VAL), coated on a SiNW-FET (referred to as VAL-PVC/SiNW-FET) was used to monitor the efflux of K + ions from chromaffin cells (Chang et al 2012).…”
Section: Protein-protein and Protein-small Molecule Interactionsmentioning
confidence: 77%
“…The SiNW-FETs were fabricated from silicon-on-insulator (SOI) wafers 17 27 28 37 , composed of a layer of high-quality single-crystal silicon (device layer), a layer of buried oxide (BOX layer), and the bulk substrate. These SOI wafers are currently state-of-the-art in the production of metal-oxide-semiconductor field-effect-transistors (MOSFETs).…”
Section: Methodsmentioning
confidence: 99%