Monitoring Implant Anneal by Non-Contact Room Temperature Photoluminescence

Effects of Implant Temperature, Backside Contamination and Scribe Lines on Room Temperature Photoluminescence Measurements on Silicon

“…A fully automated, specially designed spectrograph capable of measuring 300 mm diameter wafers, with a thermoelectrically cooled InGaAs linear diode array (WaferMasters MPL-300) was used for room temperature PL measurements. 4,[11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] The 15 mm × 15 mm sized samples were placed at the center of a blanket 300 mm diameter Si wafer. PL area mapping measurements were done over 5 mm × 5 mm areas in 50 μm intervals in both X and Y directions.…”

“…For practical reasons, room temperature PL spectroscopy has been proposed by authors and showed very promising results from small Si pieces to 300 mm diameter Si wafers and blanket samples to device wafers from advanced device manufacturers around the world. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In an effort to optimize performance, metal contamination, surface condition, organic contaminant, interface quality, bonding integrity, implant anneal, plasma damage, arching damage, residual mechanical stress and process chamber mismatching problems have been studied by room temperature PL spectroscopy. 4,[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In this paper, room temperature PL spectra were measured from MeV ion implanted Si coupons after annealing and findings are discussed in the course of measurement results analysis.…”

“…[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In an effort to optimize performance, metal contamination, surface condition, organic contaminant, interface quality, bonding integrity, implant anneal, plasma damage, arching damage, residual mechanical stress and process chamber mismatching problems have been studied by room temperature PL spectroscopy. 4,[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] In this paper, room temperature PL spectra were measured from MeV ion implanted Si coupons after annealing and findings are discussed in the course of measurement results analysis. Effects of implant temperature, backside contamination, localized defects and scribe lines on room temperature PL measurements on silicon are discussed to emphasize sample preparation and handling prior to PL measurements.…”

Monitoring metal contamination of silicon by multiwavelength room temperature photoluminescence spectroscopy

“…The RTPL spectrum was analyzed by a thermoelectrically (TE) cooled IR spectrograph system (WaferMasters MPL-300). [14][15][16] The exposure time for RTPL measurements was in the range of 20 ∼ 1000 ms. RTPL line scans and wafer mapping, up to 15,101 points per wafer, were done to gain local contamination information.…”