No abstract

Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p−-Si wafers and low-energy, low-dose boron (B) implanted n−-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implanted wafers, increased with increasing laser power density. UV Raman spectra showed significant, sudden changes in their shape and intensity around the surface melting condition. The sheet resistance of the implanted wafers was reduced as the laser power density decreased. Steep increase of RTPL intensity and steep reduction of the sheet resistance was measured from the B+ implanted n−-Si wafers above surface melting laser annealing conditions. A strong inverse correlation between RTPL intensity and sheet resistance was found for implanted wafers. The RTPL intensity, UV Raman spectra and sheet resistance of p−-Si reference wafers behaved quite differently compared to implanted wafers. The RTPL and UV Raman spectroscopy are very promising monitoring techniques for implant annealing processes.

B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B redistribution by thermal diffusion was observed from B-doped, thin Si1-xGex bi-layers on Si(100) wafers after rapid thermal annealing at 950°C or higher. Significant Ge and B diffusion in Si1-xGex bi-layers and Si substrates was verified by secondary ion mass spectroscopy. Pile up of B atoms at the surface and at the boundary between Si1-xGex bi-layers was observed in the early stages of thermal diffusion