Monitoring of FinFET Characteristics Using $\Delta V_{\text{DIBLSS}}/(I_{\text{on}}/I_{\text{off}})$  and $\Delta V_{\text{DIBL}}/(I_{\text{on}}/I_{\text{off}})$

Eng, Yi-Chuen; Hu, Luke; Chang, Tzu-Feng; Wang, Chih-Yi; Hsu, Steven; Cheng, Osbert; Lin, Cheng-Li; Lin, Yu-Shiang; Tsai, Zen-Jay; Wang, Ted; Tseng, Touber; Yang, Chih-Wei; Hsieh, Chin-Yang

doi:10.1109/jeds.2019.2898697

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…According to the results obtained in our characterization, we note that the performance ratio must be higher than 10 6 [7]. In this simulation, we note that the performance ratio is higher than 10 6 therefore, both structures are a good candidate as devices for circuits applications.…”

Section: Resultssupporting

confidence: 65%

A New GAA FinFET without n-well or p-well

Lazzaz,

Bousbahi,

Ghamnia

2024

J. Nano- Electron. Phys.

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The reduction in size of metal oxide semiconductor (MOS) devices results in the increase of leakage current due to Quantum effects. The different technologies proposed to overcome this problem. Variant structures of MOSFET such as Tri Gate FinFET or Pi gate and Omega gate to enhance current drive and control over the Short Channel Effects (SCE). In advanced technology node, the performance of CMOS circuits degrades. In sub 10 nm nodes technologies, FinFETs have a good channel control with high ON current (ION).Nowadays, power dissipation and leakage current are one the two crucial issues that the modern electronic industry is facing in 3 nm node technology. The other alternative devices such as novel GAA (Gate All Around) FinFET have been proposed to address these problems. This structure gained huge attention because of their possible fabrication process.In this paper, for the first time, we have investigated and simulated the different electrical characteristics of GAA FinFET 3 nm with N channel using HfO2 (high k material oxide) to improve the subthreshold characteristics. In the second part of this paper, we present a novel correction for the equations used in this technology because no n-well layer is required anymore as the device channel is totally surrounded by the gate which enables the placement of n and p devices in a CMOS gate much closer to each other than previous technologies.

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Section: Resultssupporting

confidence: 65%

A New GAA FinFET without n-well or p-well

Lazzaz,

Bousbahi,

Ghamnia

2024

J. Nano- Electron. Phys.

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Pre-bond Qualification of Through-Silicon Via for the Application of 3-D Chip Stacking

Chen

Lin

et al. 2021

2021 IEEE 71st Electronic Components and Technology Conference (ECTC)

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Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices

Eng

Chang

et al. 2022

IEEE J. Electron Devices Soc.

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The short-channel behaviors of n-channel (electron-conducting) fin field-effect transistors (n-FinFETs) set at different threshold voltages were analyzed at different power supply voltages. Interesting observations were made by considering the on and off voltage states of the overdrive voltage instead of the gate-source voltage. Intrinsic transistor characteristics were revealed, enabling the comparison of short-channel characteristics between devices designed for different threshold voltages. Drain-induced barrier lowering (DIBL), subthreshold swing (SS), on/off current ratio, I on /I off , and other parameters of the devices were considered. In addition, the novel figure of merit introduced in our previous work for the evaluation of short-channel effects, which accounts for the DIBL, SS, and I on /I off of the devices, was also analyzed under this context. It was shown that the off-state current does not increase significantly with the increase in the supply voltage, indicating good gate control. INDEX TERMSV DIBLSS /(I on /I off ), V SCE , FinFETs, intrinsic voltage gain, multiple devices, overdrive voltage, performance metrics, transistor intrinsic delay.

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Monitoring of FinFET Characteristics Using $\Delta V_{\text{DIBLSS}}/(I_{\text{on}}/I_{\text{off}})$ and $\Delta V_{\text{DIBL}}/(I_{\text{on}}/I_{\text{off}})$

Cited by 3 publications

References 15 publications

A New GAA FinFET without n-well or p-well

A New GAA FinFET without n-well or p-well

Pre-bond Qualification of Through-Silicon Via for the Application of 3-D Chip Stacking

Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices

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