1999
DOI: 10.1109/63.761687
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Monitoring of paralleled IGBT/diode modules

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Cited by 50 publications
(13 citation statements)
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“…It is, however, worth mentioning that the synchronization error is just one of the causes for asynchronous switchings. For example, differences in gate driver and power semiconductor device parameters may cause asynchronous switchings even if the switching patterns of the parallelconnected units were accurately synchronized [13]. Despite this, an accurate synchronization is essential, since it affects the sizing of the intermodule reactors, and this way helps to decrease the cost of the overall system [10].…”
Section: Discussion Of Resultsmentioning
confidence: 99%
“…It is, however, worth mentioning that the synchronization error is just one of the causes for asynchronous switchings. For example, differences in gate driver and power semiconductor device parameters may cause asynchronous switchings even if the switching patterns of the parallelconnected units were accurately synchronized [13]. Despite this, an accurate synchronization is essential, since it affects the sizing of the intermodule reactors, and this way helps to decrease the cost of the overall system [10].…”
Section: Discussion Of Resultsmentioning
confidence: 99%
“…It is therefore possible to have several IGBTs switching on or off at the same or nearly the same time. In the literature one can find information on paralleled IGBTs [1,2], but no detailed discussion about the conditions at multicommutation. Because the events of multicommutation have a slow repetition rate a significant effect on the IGBT power losses is not to expect.…”
Section: Operation Of Large Inverter Systemsmentioning
confidence: 99%
“…The active gate control principle from [2]- [4] is adapted to the prototype in this paper. The conclusions have been applied to an actual 160kW/380V converter.…”
Section: Introductionmentioning
confidence: 99%
“…But the maximal power ratings of IGBT must be reduced. In [2] and [3], an active gate control method for current balancing based on a prototype with parallel-connected IGBTs was presented. The switching times and gate voltages of each IGBT can be adjusted depending on the transient and static currents.…”
Section: Introductionmentioning
confidence: 99%