2003
DOI: 10.1021/ac034026v
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Mono- and Multilayer Formation by Diazonium Reduction on Carbon Surfaces Monitored with Atomic Force Microscopy “Scratching”

Abstract: Contact mode atomic force microscopy (AFM) was used to intentionally scratch a monolayer deposited on a pyrolyzed photoresist film (PPF). The force was set to completely remove the monolayer but not to damage the underlying PPF surface. A line profile determined across the scratch with tapping mode AFM permitted determination of the monolayer thickness from the depth of the scratch. A statistical process was devised to avoid user bias in determining the monolayer thickness and was used to determine the thickne… Show more

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Cited by 347 publications
(458 citation statements)
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“…Current density-voltage (J-V) curves shown are averages of four to eight junctions for a given molecule and thickness from a total of ∼300 fabricated and tested junctions. (19,30,31). The results in Fig.…”
Section: Resultsmentioning
confidence: 86%
“…Current density-voltage (J-V) curves shown are averages of four to eight junctions for a given molecule and thickness from a total of ∼300 fabricated and tested junctions. (19,30,31). The results in Fig.…”
Section: Resultsmentioning
confidence: 86%
“…The AFM tip was used in contact mode to scratch a rectangular area on the PPF functionalized samples by exercising a force sufficient to remove the organic part without damaging the PPF sample. Profiling depth measurements of the scratched area in an intermittent contact mode gave the average thickness of the layer, as described by Mc Creery and co-workers 48 . The thickness was thus estimated to be 1.3 ± 0.1 nm (Fig.…”
Section: Synthesis and Grafting Procedures Of Calix[4]tetra-anilinesmentioning
confidence: 99%
“…33,34 Although the bonded molecules do not "assemble" into the ordered arrangement of more common Au/thiol self-assembled monolayers, they tolerate vapor deposition of Cu or carbon top contacts to produce junctions containing 2−22 nm thick molecular layers with high yield (>80% nonshorted devices). tolerant to etching reagents, photoresist, and developers after completion.…”
Section: −27mentioning
confidence: 99%