Monocrystalline 1.7-eV-Bandgap MgCdTe Solar Cell With 11.2% Efficiency

Becker, Jacob J.; Campbell, Calli M.; Tsai, Chia-Cheng; Zhao, Yuan; Lassise, Maxwell B.; Zhao, Xin-Hao; Boccard, Mathieu; Holman, Zachary C.; Zhang, Yong-Hang

doi:10.1109/jphotov.2017.2769105

Cited by 10 publications

(8 citation statements)

References 24 publications

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“…The FF of the device shows a peak at 200 °C due to the trade-off between V oc and J sc . This rollover phenomena in FF can be ascribed to the trade-off between carrier escape and recombination at high temperatures, which is also reported in other solar cells using double heterostructures . As a result, the power conversion efficiency of the nonpolar InGaN solar cell increases monotonically from 0.55% at 25 °C to 0.94% at 350 °C and then falls off to 0.812% at 450 °C.…”

Section: High-temperature Characterizations Of the Nonpolar Ingan/gan...supporting

confidence: 70%

“…This rollover phenomena in FF can be ascribed to the trade-off between carrier escape and recombination at high temperatures, which is also reported in other solar cells using double heterostructures. 39 As a result, the power conversion efficiency of the nonpolar InGaN solar cell increases monotonically from 0.55% at 25 °C to 0.94% at 350 °C and then falls off to 0.812% at 450 °C. This large enhancement in solar cell efficiency up to 350 °C has never been reported in other solar cell devices.…”

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confidence: 96%

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High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects

Huang

et al. 2019

ACS Photonics

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High-temperature photovoltaics (PV) for terrestrial and extraterrestrial applications have presented demanding challenges for current solar cell materials, such as Si, III−V AlGaInP, and II−VI. Widebandgap III-nitride materials, in contrast, offer several intrinsic advantages that make them extremely appealing for high-temperature applications. In this study, we fabricated and characterized III-nitride solar cells using polarization-free (i.e., nonpolar) InGaN/GaN multiple quantum wells (MQWs). The InGaN solar cells showed a large working temperature range from room temperature (RT) to 450 °C, with positive temperature coefficients up to 350 °C. The peak external quantum efficiencies of the devices showed a 2.5-fold enhancement from RT (∼32%) to 450 °C (∼81%), which is distinct from all other solar cells ever reported. This can be partially attributed to an increase of over 70% in carrier lifetime in nonpolar InGaN MQWs obtained from time-resolved photoluminescence. Furthermore, a thermal radiation analysis revealed a unique self-cooling effect for III-nitride materials, which also helps enhance device performance at high temperature. These results offer new insights and strategies for the design and fabrication of highefficiency high-temperature PV cells.

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Section: High-temperature Characterizations Of the Nonpolar Ingan/gan...supporting

confidence: 70%

mentioning

confidence: 96%

High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects

Huang

et al. 2019

ACS Photonics

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“…VOC,in -VOC,ex. The deficit can be observed in thin film solar cells such as Cu(In,Ga)(Se,S)2, 5,6 CdTe, 7 perovskite, 4,8,9 and is associated to interface recombination in the device. 4,[9][10][11][12][13] Identifying the source of interface recombination and the underlying qFLs gradient is crucial for achieving higher efficiency in these devices and enabling better understanding of device physics.…”

Section: Introductionmentioning

confidence: 99%

Near surface defects: Cause of deficit between internal and external open‐circuit voltage in solar cells

Sood

Urbaniak

Boumenou

et al. 2021

Progress in Photovoltaics

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Interface recombination in a complex multilayered thin‐film solar structure causes a disparity between the internal open‐circuit voltage (VOC,in), measured by photoluminescence, and the external open‐circuit voltage (VOC,ex), that is, a VOC deficit. Aspirations to reach higher VOC,ex values require a comprehensive knowledge of the connection between VOC deficit and interface recombination. Here, a near‐surface defect model is developed for copper indium di‐selenide solar cells grown under Cu‐excess conditions. These cell show the typical signatures of interface recombination: a strong disparity between VOC,in and VOC,ex, and extrapolation of the temperature dependent q·VOC,ex to a value below the bandgap energy. Yet, these cells do not suffer from reduced interface bandgap or from Fermi‐level pinning. The model presented is based on experimental analysis of admittance and deep‐level transient spectroscopy, which show the signature of an acceptor defect. Numerical simulations using the near‐surface defects model show the signatures of interface recombination without the need for a reduced interface bandgap or Fermi‐level pinning. These findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current–voltage measurements to identify the cause of interface recombination in the devices.

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“…12 Finding a suitable 1.7-eV-bandgap candidate has proved to be a challenge, as exemplified by the high bandgap-voltage offsets (W oc ) reported for the majority of absorbers with bandgaps in the range of 1.6 to 1.8 eV. [13][14][15][16] Group III-V materials…”

Section: Introductionmentioning

confidence: 99%

Predicted Power Output of Silicon-Based Bifacial Tandem Photovoltaic Systems

Onno

Rodkey

Asgharzadeh

et al. 2020

Joule

Self Cite

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The energy yield of photovoltaic systems can be augmented by increasing the efficiency of individual cells through tandem architectures, increasing the normal irradiance on modules through tracking, or increasing the total irradiance with bifacial modules. Here, we investigate bifaciality in series-connected tandem architectures and find modest energy gains relative to their monofacial cousins. More importantly, the range of appropriate top-cell bandgaps widens, enabling higher-performance top-cell materials to be used without a detrimental impact on the current matching between the cells.

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Monocrystalline 1.7-eV-Bandgap MgCdTe Solar Cell With 11.2% Efficiency

Cited by 10 publications

References 24 publications

High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects

High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects

Near surface defects: Cause of deficit between internal and external open‐circuit voltage in solar cells

Predicted Power Output of Silicon-Based Bifacial Tandem Photovoltaic Systems

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