Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap

Lee, Yong-Hwan; Yang, Inseok; Tan, Hark Hoe; Jagadish, Chennupati; Karuturi, Siva Krishna

doi:10.1021/acsami.0c10370

Cited by 13 publications

(6 citation statements)

References 51 publications

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“…The spalling method relies on a stressor layer deposited on a semiconductor, which creates a crack that propagates across the wafer and peels off a thin film. In short, the stressor layer creates different stress modes that limit the depth of the crack that propagates across the wafer, and thus exfoliates a separated film of a certain thickness, typically 10-20 µm [222][223][224]. Figure 15(a) shows a typical structure used in spalling as well as a photograph of a solar cell array, demonstrating the flexibility of the films.…”

Section: Spallingmentioning

confidence: 99%

Topical review: pathways toward cost-effective single-junction III–V solar cells

Raj¹,

Haggrén²,

Wong³

et al. 2021

J. Phys. D: Appl. Phys.

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III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

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Section: Spallingmentioning

confidence: 99%

Topical review: pathways toward cost-effective single-junction III–V solar cells

Raj¹,

Haggrén²,

Wong³

et al. 2021

J. Phys. D: Appl. Phys.

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“…The fracture surface morphology of InP is found to be highly dependent on the crystal orientation of InP donor substrate (see Figure ). It is well-known that the {110} plane is a preferred cleavage plane in zinc-blende III–V semiconductors due to its low fracture toughness compared to other prime planes . Therefore, the crack tends to follow the {110} planes, and it yields an extremely smooth surface on the fracture surface of (110) InP, while a triangle shaped periodic grating structure is obtained on (100) InP (see Figure a–d).…”

Section: Crack-assisted Layer Transfer Of Various Semiconductorsmentioning

confidence: 99%

“…(g) Optical reflection of the spalled (110) and (100) InP thin film with flat surface and grating structure as shown in panels a–d. Reprinted with permission from ref . Copyright 2020 American Chemical Society.…”

Section: Crack-assisted Layer Transfer Of Various Semiconductorsmentioning

confidence: 99%

Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects

Lee

Tan

Jagadish

et al. 2020

ACS Appl. Electron. Mater.

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The production of flexible monocrystalline semiconductor thin films less than a few tens of micrometers in thickness is currently receiving huge interest in various emerging applications such as mobile health care (mHealth), wearable devices, smart cities, and Internet of things (IoT). However, conventional techniques fail to produce wafer-scale monocrystalline thin films without the use of sophisticated equipment. Recently, the controlled cracking method has shown promise as a facile and scalable method to produce monocrystalline inorganic semiconductor thin films such as Si, Ge, III–V, and III–N materials. In this method, a crystalline semiconductor thin film can be exfoliated from its thick donor substrate via subsurface crack propagation. The cracking based layer transfer approach does not require expensive processing equipment and enables the production of multiple thin films from the same donor substrate. In this review, we present the working principles, recent progress, and future prospects of this emerging crack-assisted layer transfer technology. The unique advantages of this technology for state-of-the-art flexible (opto)electronics are also highlighted. This review offers insights for the fabrication of large-scale flexible monocrystalline semiconductors, which is crucial for the development of next-generation (opto)electronics.

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“…Raman microscopy is often used as an auxiliary method in characterizing the crystal response to the applied contact load [ 17 , 18 , 19 , 20 , 21 ]. Hence, the motivation of the present research was to more systematically approach the Raman spectroscopic characterization of the small-scale plasticity of InP crystal.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Indentation Load on the Raman Spectra of the InP Crystal

et al. 2022

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Nanoindentations and the Raman spectroscopy measurements were carried out on the (001) surface of undoped and S-doped InP crystal. The samples were indented with the maximum load ranging from 15 mN to 100 mN. The phase transition B3→B1 was not confirmed by spectroscopic experiments, indicating a plastic deformation mechanism governed by dislocations activity. Increasing the maximum indentation load shifts and the longitudinal and transverse optical Raman bands to lower frequencies reveals a reduction in the elastic energy stored in the plastic zone right below the indentation imprint. Mechanical experiments have shown that a shift in Raman bands occurs alongside the indentation size effect. Indeed, the hardness of undoped and S-doped InP crystal decreases as a function of the maximum indentation load.

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Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap

Cited by 13 publications

References 51 publications

Topical review: pathways toward cost-effective single-junction III–V solar cells

Topical review: pathways toward cost-effective single-junction III–V solar cells

Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects

Effect of the Indentation Load on the Raman Spectra of the InP Crystal

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