Monolithic 1.55 µm GaInNAsSb quantum well passively modelocked lasers

Yang, Xin; Lin, C‐Y.; Li, Y.; Bae, Hae-Rahn; Yuen, H. B.; Wistey, Mark A.; Jun, J.S. Harris; Bank, Seth R.; Lester, L. F.

doi:10.1049/el:20080362

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…(8) before even fabricating them. These analytical guidelines have been successfully applied previously [18][19][20], but the range of designs and analysis is expanded in this work verifying the broad applicability of the theory.…”

Section: Theorymentioning

confidence: 80%

Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

Lin¹,

Yang²,

Li³

et al. 2009

Opt. Express

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By extending the net-gain modulation phasor approach to account for the discrete distribution of the gain and saturable absorber sections in the cavity, a convenient model is derived and experimentally verified for the cavity design of two-section passively mode-locked quantum dash (QDash) lasers. The new set of equations can be used to predict functional device layouts using the measured modal gain and loss characteristics as input. It is shown to be a valuable tool for realizing the cavity design of monolithic long-wavelength InAs/InP QDash passively mode-locked lasers.

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Section: Theorymentioning

confidence: 80%

Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

Lin¹,

Yang²,

Li³

et al. 2009

Opt. Express

Self Cite

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Analytical Modeling of the Temperature Performance of Monolithic Passively Mode-Locked Quantum Dot Lasers

Crowley

Murrell

Patel

et al. 2011

IEEE J. Quantum Electron.

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Mode-Locked Laser Diodes and Their Monolithic Integration

Marsh

Hou

2017

IEEE J. Select. Topics Quantum Electron.

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We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, operation at the fundamental cavity frequency is appropriate, but at higher frequencies harmonic mode-locking (HML) is used. To increase output power and control nonlinear behavior, the gain needs to be modified, and an AlGaInAs/InP structure with a three-quantumwell active layer and passive far-field reduction layer is presented. In 40-GHz all-active MLLDs, this structure offers improvements in internal loss, slope efficiency, mode locking (ML) range, RF linewidth, timing jitter, far field pattern, and coupling efficiency to a single-mode fiber. By creating a transparent passive waveguide in part of the cavity, a 490-fs pulse width was achieved, the shortest reported from any quantum well MLLD. Several approaches are described for HML: colliding pulse ML operating up to 240 GHz, coupled cavity ML up to 160 GHz, and sampled Bragg grating constructions up to 1.28 THz. This latter approach offers stable HML over a wide range of bias conditions. Finally, we report a synchronized multicolor ML laser array, containing four 40-GHz lasers with designated wavelength registration for optical code division multiple access or optical time division multiple access applications.

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Monolithic 1.55 µm GaInNAsSb quantum well passively modelocked lasers

Abstract: The first monolithic GaInNAsSb quantum well 1.55 mm passively modelocked lasers grown on a GaAs substrate are reported. A repetition rate of up to 13.2 GHz and an optical pulse width as small as 26 ps have been realised.

Cited by 4 publications

References 10 publications

Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

Analytical Modeling of the Temperature Performance of Monolithic Passively Mode-Locked Quantum Dot Lasers

Mode-Locked Laser Diodes and Their Monolithic Integration

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