Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

Lin, Chang-Yi; Yang, Xin; Li, Y.; Chiragh, Furqan L.; Lester, L. F.

doi:10.1364/oe.17.019739

Cited by 32 publications

(13 citation statements)

References 21 publications

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“…Deconvolved pulses down to 1.2 ps were observed after compensation of the GDD and 1.7 time bandwidth product. Similar results were also achieved from two-section InAs/InGaAlAs Qdash laser by Lin et al [293] who demonstrated 12.3 and 18.4 GHz repetition rates from 3.4 and 2.3 mm long devices, respectively, emitting at 1.59 µ m. In general, lower average output powers due to low drive current besides the inability to attain wider spectral bandwidth render the two-section mode-locked laser applications compared to the single section device …”

Section: Two-sectionsupporting

confidence: 82%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Two-sectionsupporting

confidence: 82%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…1,2 Several unique characteristics of quantum dot ͑QD͒ materials, such as ultrabroad bandwidth, ultrafast gain dynamics, and easily saturated gain and absorption, make them an ideal choice for semiconductor monolithic MLLs. [3][4][5] The rf linewidth, which directly influences the phase noise spectral density, is directly related to the integrated rms timing jitter in a semiconductor passive MLL. 6 Thanks to the lower threshold current density and the lower associated spontaneous emission noise in QD laser devices compared to their quantum well ͑QW͒ counterparts, the rf linewidth is generally narrower in a passive QD MLL.…”

mentioning

confidence: 99%

rf linewidth reduction in a quantum dot passively mode-locked laser subject to external optical feedback

Lin

Grillot

Naderi

et al. 2010

Applied Physics Letters

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International audienceThe effect of external optical feedback on an InAs/GaAs quantum dot passively mode-locked laser is investigated. The rf linewidth narrows from 8 KHz in the free-running situation to a value as low as 350 Hz under relatively low feedback. The rf linewidth characterization under resonant feedback at a multiple of the laser cavity length validates the prediction of a previous numerical simulation. It is also confirmed that the integrated rms timing jitter varies as the square root of the rf linewidth. The results are promising for the development of compact, monolithic semiconductor mode-locked lasers as low noise optoelectronic oscillators

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“…19 Results showed that, given the laser geometry, mode-locking should indeed happen with the working conditions used to obtain the results reported in this paper. The investigation is still ongoing for the 1-mm laser.…”

Section: Passive Mode-locking: Results and Discussionmentioning

confidence: 54%

41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

Dontabactouny

Piron

Klaime

et al. 2012

Journal of Applied Physics

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(2011) The self-consistent nonlinear theory of electron cyclotron maser based on anomalous Doppler effect Appl. Phys. Lett. 98, 261502 (2011) Cavity quantum electrodynamics for photon mediated transfer of quantum states J. Appl. Phys. 109, 113110 (2011) A method of suppressing mode competition in a coaxial localized-defect Bragg resonator operating in a higherorder mode Phys. Plasmas 18, 064506 (2011) Strong coupling between a photonic crystal nanobeam cavity and a single quantum dot Appl. Phys. Lett. 98, 173104 (2011) Additional information on J. Appl. Phys. This paper reports recent results on InAs/InP quantum dash-based, two-section, passively modelocked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 lm at 20 C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 mA. Their output pulses are significantly chirped. The 41-GHz laser exhibits 7 ps pulses after propagation in 60 m of a single-mode fiber. The 10.6-GHz laser generates one picosecond pulses with 545 m of a single-mode fiber. Its single side-band phase noise does not exceed -80 dBc/Hz at 100 kHz offset, leading to an average timing jitter of 800 fs.

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Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers

Cited by 32 publications

References 21 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

rf linewidth reduction in a quantum dot passively mode-locked laser subject to external optical feedback

41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

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