“…[5][6][7][8][9][10][11][12][13][14][15] Their beneficial operating parameters, like, e.g., low threshold current density and its improved temperature stability, broad wavelength tunability, and high speed of modulation, stem from the properties of the gain medium composed of InAs QDashes grown on InP(001). [6][7][8][9][10][11][12][13][14][15] The InAs/InP(001) material system remains crucial for fabrication of quasi-zero-dimensional semiconductor nanostructures emitting above 1.5 lm. [1][2][3][4][5]8 This may situate the InAs/InP(001) QDashes at the cross point between quantum information processing and optical communication technology.…”