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Recently, the development of indium oxide such as In2O3 on the III–V semiconductors shows successful technological applications as in the gas sensor field, the emission devices, the biotechnology, etc. The indium oxide In2O3 attracted considerable research due to many methods of its synthesis. In our study, we were interested in developing the indium oxide In2O3 on the In metal and InSb surfaces by electron beam stimulated oxidation. The formation of In2O3 on InSb was advantaged by a previous treatment due to the sputtering of the surface by the argon ions at low energy 300 eV with a current density 2 μA/cm2 followed by heating in UHV at 300°C. Our results were monitored by the analysis techniques including the Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) well suited to study the surface with respect to physical structure and chemical composition.

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The semiconductor SnO 2 is an important material to be used in different fields as the monitoring of air pollution, toxic gas and other applications as solar cells, optoelectronic devices, etc. The simulation method such as the generalized gradient approximation (GGA) of SnO 2 is very interesting in determining its lattice parameters with accuracy in comparison with the experimental data. The GGA simulation method and the one established by Becke and Johnson mBJ are useful for predicting the electronic properties related to the charge distribution of SnO 2 compound. The calculated density of states and the charge density are well confirmed owing to the experimental results related to the electron energy loss spectroscopy (EELS) technique, very sensitive to the characterization of materials.