2023
DOI: 10.36227/techrxiv.20518131
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Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses

Abstract: <p> Instigated by the plethora of data generated by edge devices and IoT devices, machine learning has become the de facto choice of everyone for solving many tasks. Applications such as intelligent healthcare monitoring systems, smart watches, or automatic cars require real-time processing of the data or image, which is done by machine learning algorithms with higher efficiency than humans. There are two possible methods for artificial intelligence?1. non-von-Neumann hardware-based implementation of neu… Show more

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Cited by 1 publication
(2 citation statements)
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“…This likelihood can be attributed to the CMOS compatibility and scalability of H f O 2 , which easily integrates ferroelectric memories with the advanced CMOS process. The integration of H f O 2 based ferroelectric memory with 28-nm high-k -metal-gate (HKMG) technology, FinFETs and thin-film technology have corroborated this [6][7][8].…”
Section: Introductionmentioning
confidence: 68%
See 1 more Smart Citation
“…This likelihood can be attributed to the CMOS compatibility and scalability of H f O 2 , which easily integrates ferroelectric memories with the advanced CMOS process. The integration of H f O 2 based ferroelectric memory with 28-nm high-k -metal-gate (HKMG) technology, FinFETs and thin-film technology have corroborated this [6][7][8].…”
Section: Introductionmentioning
confidence: 68%
“…The ferroelectric materials typically have non-centrosymmetric structures, a broken symmetry, in equilibrium. Therefore, any generic vector is not vanished by the crystal symmetry, and in the case of ferroelectric material, the vector property polarization shows spontaneous polarization in the equilibrium state [2][3][4][5][6][7][8][9]. This spontaneous polarization property can be exploited for building memories based on ferroelectric thin film.…”
Section: Introductionmentioning
confidence: 99%