Monolithic Bidirectional Switch Based on GaN Gate Injection Transistors

Musumeci, Salvatore; Panizza, Marco; Stella, Fausto; Perraud, Francois

doi:10.1109/isie45063.2020.9152230

Cited by 30 publications

(8 citation statements)

References 18 publications

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“…In this field of power GaN transistor integration is to highlight the monolithic solution of two GIT GaN devices arranged in a single chip to obtain a bidirectional switch, which has been realized in recent years for applications of protection power switches for voltages up to 400V and hybrid relays [30].…”

Section: Integration Of Gan Structuresmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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Section: Integration Of Gan Structuresmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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“…In contrast to single transistor/diode pairs, a bidirectional switch can operate in all four quadrants. In the on state, the current can flow in any direction across the bidirectional switch while in the blocking state it can block positive and negative voltages [100]. Battery management systems (BMS) or solid state current breakers are typical applications for bidirectional switches [100], [101].…”

Section: B Bidirectional Gan Switchesmentioning

confidence: 99%

“…In the on state, the current can flow in any direction across the bidirectional switch while in the blocking state it can block positive and negative voltages [100]. Battery management systems (BMS) or solid state current breakers are typical applications for bidirectional switches [100], [101]. Traditionally, a bidirectional switch has been created with two anti-series connected IGBT/Diodes or MOSFETs (The MOSFET has the required body diode).…”

Section: B Bidirectional Gan Switchesmentioning

confidence: 99%

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Gallium Nitride Power Devices: A State of the Art Review

Udabe,

Baraia-Etxaburu,

Diez

2023

IEEE Access

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Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities. In contrast to Silicon Carbide (SiC) devices, Gallium Nitride (GaN) devices are several steps behind in terms of development, standardization and achievable power levels. This makes the use and integration of these devices in real power applications more challenging. Commercially available current Power GaN devices are based on lateral normally ON HEMT transistors. In order to get normally OFF power transistors, two transistor structures have been proposed: enhancement mode (e-mode) and hybrid transistors. Current E-mode transistors present a low gate threshold voltage which could lead to crosstalk problems. In contrast, hybrid transistors have higher gate threshold voltages, however, the use of a Silicon MOSFET in their structure limits their performance. The lack of a standard power GaN device makes it difficult the adoption of these promising devices by the industry. Thus, in order to facilitate the adoption of these power GaN devices, this paper presents a State of the Art of power Gallium Nitride devices focusing on their structures, basics and gate terminal requirements.INDEX TERMS GaN devices, review, wide bandgap semiconductor.

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“…Recent developments of GaN technology allow the integration of a power stage halfbridge in a symmetric or asymmetric configuration [22,23] together with signal control circuits for low power converter applications (up to 400 W). The integration step allows driving the gate of the GaN FET and monitoring some device parameters.…”

Section: Power Stage Integrationmentioning

confidence: 99%

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

et al. 2021

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The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.

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Monolithic Bidirectional Switch Based on GaN Gate Injection Transistors

Cited by 30 publications

References 18 publications

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Gallium Nitride Power Devices: A State of the Art Review

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

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