Monolithic Ge/Si avalanche photodiode receiver for 10Gb/s 1.3&amp;#x03BC;m application

Zadka, Moshe; Litski, Stas; Sarid, G.; Morse, Mike; Paniccia, Mario; Kuo, Ying-Hao; Bowers, John E.; Beling, Andreas; Liu, H.-D.; McIntosh, Dion; Campbell, Joe C.; Pauchard, A.

doi:10.1109/leos.2008.4688605

Cited by 11 publications

(30 citation statements)

References 6 publications

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“…The structure consists of a Si multiplication layer, a Si charge layer, and a Ge absorption layer, which is similar with that in Ref. [3]. The thicknesses and the doping concentrations for all layers are shown in Figure 1(b).…”

Section: Device Structures and Equivalent Circuit Modellingmentioning

confidence: 85%

“…In contrast, silicon has a low k-value (<0.1), which makes it one of the most promising candidates for APDs that have both high gain and high bandwidth simultaneously. In order to make Si-APDs usable in the infrared regime, a material with a high absorption coefficient in the infrared, like InGaAs [2] or Ge [3][4][5] is used for the absorption layer along with the Si multiplication layer. Ge is attractive since it is possible to fabricate APDs based on a complementary metal-oxidesemiconductor (CMOS) compatible process.…”

Section: Introductionmentioning

confidence: 99%

“…Ge is attractive since it is possible to fabricate APDs based on a complementary metal-oxidesemiconductor (CMOS) compatible process. Although these APDs tend to have higher dark current because of threading dislocations due to the lattice mismatch between Ge and Si [3], it is possible to minimize the impact of dislocations with careful processing and device design. In Ref.…”

Section: Introductionmentioning

confidence: 99%

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Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Dai

Chen

Bowers

et al. 2010

Phys. Status Solidi (c)

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Section: Device Structures and Equivalent Circuit Modellingmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Dai

Chen

Bowers

et al. 2010

Phys. Status Solidi (c)

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“…One approach has been to combine a Ge absorption region with a Si multiplication layer in an SACM APD. [18][19][20] These APDs have achieved comparable to the best III-V compound APDs but not superior, as would have been expected owing to their low k value. The reason is that their high dark current, which arises from the lattice mismatch between Ge and Si, contributes enough to the noise to offset the lower excess noise factor.…”

Section: Introductionmentioning

confidence: 88%

Recent progress in avalanche photodiodes for sensing in the IR spectrum

et al. 2016

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We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al x In 1-x As y Sb 1-y , grown lattice-matched on GaSb substrates. By varying the aluminum content the direct bandgap can be tuned from 0.25 eV (0% aluminum) to 1.24 eV (75% aluminum), corresponding to photon wavelengths from 5000 nm to 1000 nm, with the transition from direct-gap to indirect-gap occurring at ~1.18 eV (~72% aluminum), or 1050 nm. This has been used to fabricate separate absorption, charge, and multiplication (SACM) APDs using Al 0.7 In 0.3 As 0.3 Sb 0.7 for the multiplication region and Al 0.4 In 0.6 As 0.3 Sb 0.7 for the absorber. Gain values as high as 100 have been achieved and the excess noise factor is characterized by a k value of 0.01, which is comparable to or below that of Si. In addition, since the bandgap of the absorption region is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths.

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“…At present, III-V compound (e.g. InGaAs, InP) [21,22] and group IV (Ge) [11][12][13][14] semiconductors are the materials of choice for vertically-illuminated NIR PDs, due to their high (>90%) [8] NIR absorption. The ever growing demand and performance requirements in modern systems (such as bit-rate, number of pixels, imaging matrix size, operation and processing speed) [1,8] make it crucial to integrate PDs with supporting circuitry (drivers, amplifiers, processors) on the same chip.…”

Section: Introductionmentioning

confidence: 99%

Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors

et al. 2017

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We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wavelength-dependent photoresponse with external (internal) responsivity∼20mA/W (0.25A/W). The spectral-selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for free-space optical communications, coherence optical tomography and light-radars.

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Monolithic Ge/Si avalanche photodiode receiver for 10Gb/s 1.3μm application

Cited by 11 publications

References 6 publications

Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Recent progress in avalanche photodiodes for sensing in the IR spectrum

Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors

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