Monolithic HgCdTe charge transfer device infrared imaging arrays

Chapman, R. A.; Borrello, S.R.; Simmons, A.; Beck, Jeffrey; Lewis, AJ; Kinch, M. A.; Hynecek, Jaroslav; Roberts, C.G.

doi:10.1109/t-ed.1980.19831

Cited by 29 publications

(1 citation statement)

References 9 publications

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“…The preparation of metal-insulator-semiconductor (MIS) structures based on narrow-gap semiconductors (NGS) has considerably succeeded recently. This is stimulated by the efforts for producing basic elements of various infrared imaging devices [1,2]. From a fundamental point of view MIS structures appear as a tool for investigating the quasi-two-dimensional systems in the potential well at NGS-insulator interface [3,4] and the interface itself [5][6][7] whose nature is far from common satisfactory explanation yet [8].…”

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confidence: 99%

On the evaluation theory of C-V measurements on narrow gap semiconductor MIS structures

Germanova

Valcheva

1987

Rev. Phys. Appl. (Paris)

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2014 On a développé et utilisé un modèle théorique pour évaluer les courbes expérimentales capacité-voltage dans des structures MIS réalisées sur des semiconducteurs avec une bande interdite étroite. On a discuté et démontré l'influence de certains facteurs sur le comportement des courbes C-V théoriques et sur la densité des états d'interface, comme l'utilisation de la statistique de Fermi-Dirac, l'ionisation incomplète et la recharge des dopants, le caractère non parabolique de la zone de conduction. Abstract. 2014 A theoretical model for evaluating experimental capacitance 2014voltage curves on narrow 2014 gap semiconductor (NGS) MIS structures is developed. The features of NGS are taken into account. Demonstrated and discussed is the effect of utilizing Fermi-Dirac statistics, incomplete ionization and recharging of dopants and conduction band nonparabolicity on the behaviour of theoretical C-V curves and interface state density assessment. The analysis so conducted shows that these features must be accounted in C-V analysis of NGS MIS structures. Otherwise incorrect densities of interface states distributed across the band-gap of the semiconductor are obtained. Tome 22N° 2

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