Monolithic Integrated Oscillator with Silicon IMPATT Diode for Automotive Radar Applications

Xu, Hongya; Morschbach, M.; Werner, Jérémie; Kasper, E.

doi:10.1109/emicc.2008.4772218

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2014

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“…Discrete IMPATT diode, or transit-time diode in general, had demonstrated unique advantage in terms of power generation in the millimeter / submillimeter frequency range [3], but it has not been well integrated into any CMOS or BiCMOS technology. Although there are some studies on the monolithic integrated approach, they are either not fully compatible with existing CMOS or BiCMOS technology [4], or are not efficient due to capacitance loading effect [5]. This paper presents the transit-time effect inside a bipolar which can be utilized to generate RF power for millimeter / sub-millimeter frequency applications.…”

Section: Introductionmentioning

confidence: 98%

The analysis of transit-time effect of bipolar base collector junction breakdown

Trombley

Krakowski

et al. 2014

2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems

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This paper analyzes the transit-time effect of a bipolar biased at base-collector junction breakdown condition. Both simulation and experiment show that dynamic negative resistance, due to the transit-time effect, can be achieved under the avalanche breakdown condition. Therefore, a bipolar biased at breakdown can be used as a transit-time diode, with the potential to generate RF power for millimeter / sub-millimeter frequency applications.

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Section: Introductionmentioning

confidence: 98%