Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

Abstract

In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal—insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self-protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias (> 70 V/μm) and suppress the leakage current (< 5 × 10−11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.

Effects of polarization on intersubband transitions of AlxGa1−xN/GaN multi-quantum wells

“…In recent years, the III-nitride materials have received much attention because of their potential usefulness in ultraviolet and blue lighting, detection, [1] high density optical storage systems, full-color displays, chemical sensors, and medical applications. [2,3] While most of the contemplated applications are in the visible and ultraviolet spectral region and based on their interband transitions, interest has been increasing in infrared applications based on their intersubband transitions (ISBT). [4][5][6][7] Compared to GaAs/AlGaAs and InGaAs/AlInAs, AlGaN/GaN multi-quantum wells (MQWs) have many advantages.…”