Monolithic Integration of Buried-Heterostructures in a Generic Integrated Photonic Foundry Process

Abstract

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AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

“…CW lasing operation up to 40 • C has been demonstrated for III-V-on-SOI FP lasers containing hybrid optical modes where 80% of the mode is confined in the Si waveguide. In addition, lasing operation was also demonstrated for a laser grown on InP-SOI coupled to Si-photonic DBR cavities under CW operation at 20 • C. In our case, the use of buried heterostructures such as Buried Ridge Structure (BRS) or even Semi-Insulating Heterostructure (SIBH) could be a path to improve heat dissipation through InP lateral cladding layers [26]. Altogether, this demonstration shows that this integration scheme holds a promising perspective by combining the advanced regrowth technologies developed in the InP platform combined with the benefits of Si photonics platform.…”

“…This lower thermal behavior can be attributed to poorer heat dissipation induced by the thickness of the buried oxide (BOX) of 2 µm for InP-SOI as compared to a value of 200 nm for InPoSi. Thermal stability of our components could be further improved by burying the III-V waveguide through InP regrowth steps [26].…”

“…The ambition is to create a generic integration scheme combining the best offered by the III-V and the Si photonics platforms. The regrowth capability gives access to the large epitaxial toolkit available in the conventional InP monolithic platform, where several epitaxial steps are often implemented [26][27][28]. For example, buried lasers, as compared to ridge waveguide lasers, are highly beneficial to reduce power consumption and enhance thermal stability [29,30].…”

Scaling photonic integrated circuits with InP technology: A perspective

“…10,107,108 SOAs and many laser designs exhibit a low wall-plug efficiency (WPE), making them thermally constrained. 2,32,109 Areal optimization will be required to enhance the packing density of miniaturized components, especially for components that require electrical wiring and active tuning. This aspect includes optimization of the integration technology, heat dissipation, and circuit floorplanning.…”

“…[28][29][30] The InP platform has demonstrated the versatility and flexibility required for PICs with the most diverse component types. With methods including regrowth, 31,32 selective-area growth (SAG), 33 intermixing, 34 and vertical active-passive integration, 35 materials of different bandgaps, each individually and functionally optimized, can be integrated on the same substrate. The optical coupling between components can be seamless in the case of butt-joint interfaces.…”