1990
DOI: 10.1109/55.61774
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Monolithic integration of complementary HBTs by selective MOVPE

Abstract: Holes genemted by impact ionization in the channels of InP-based heterostiucture jield-effect transistors can tunnel to the gate electrode and contribute to the parasitic gate current. By inserting pseudomorphic AlAs-spacer layers in order to increase the m[ence-hand discontinuity, the channel-to-gate trunsfer rate of holes can be effectiuely reduced. 0 1996 John Wley & Sons, Inc. INTRODUCTIONThe parasitic gate current through the Schottky gate contact of InP-based InAlAs/InGaAs heterostructure field-effect tr… Show more

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Cited by 29 publications
(1 citation statement)
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“…Such an AlGaAs/GaAs integrated NPN/PNP push-pull amplifier has demonstrated power performance at 2.5 GHz [3]. Multiple-stage amplifiers could be designed with alternating NPN and PNP stages, allowing for simple designs with a single power supply and direct coupling between stages, as demonstrated in a complementary AlGaAs/GaAs Gilbert cell [4]. PNP HBTs could also be used as active loads and current sources for NPN amplifier stages, which would provide higher gain per stage, reduced power consumption in the load, and reduced wafer area consumed by passive resistors.…”
Section: Introductionmentioning
confidence: 99%
“…Such an AlGaAs/GaAs integrated NPN/PNP push-pull amplifier has demonstrated power performance at 2.5 GHz [3]. Multiple-stage amplifiers could be designed with alternating NPN and PNP stages, allowing for simple designs with a single power supply and direct coupling between stages, as demonstrated in a complementary AlGaAs/GaAs Gilbert cell [4]. PNP HBTs could also be used as active loads and current sources for NPN amplifier stages, which would provide higher gain per stage, reduced power consumption in the load, and reduced wafer area consumed by passive resistors.…”
Section: Introductionmentioning
confidence: 99%