Abstract:We report the design, fabrication, and performance of monolithic, slot-antenna coupled Schottky-collector resonant tunnel diode (SRTD) oscillator arrays. A 64-element oscillator array oscillated at 650 GHz while a 16-element array produced 28 pt.W at 290 GHz. Introduction:Resonant tunnel diode (RTD) waveguide oscillators have been reported at frequencies as high as 712 GHz [1], well beyond the highest frequency transistor oscillators built to date [2]. Power levels achieved by discrete waveguide RTD oscillators are limited by constraints imposed on maximum device area for suppressing parasitic bias circuit oscillations [3]. Higher power levels can be obtained with monolithic RTD oscillators in which these constraints are eliminated by on-wafer bias stabilizers [4]. Power levels can then be further increased using quasi-optical array RTD oscillators [5]. Here, we report monolithic Schottky-collector RTD (SRTD) oscillator arrays with on-wafer Schottkydiode bias stabilizers. Different circuits operated at frequencies ranging from 100 GHz to 650 GHz. A 64-element array oscillated at 650 GHz. To our knowledge this is the highest oscillation frequency achieved by a monolithic oscillator. Additionally, a 16-element array produced 28 p,W at 290 GHz.

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Using non-c-plane bulk GaN substrates, we demonstrate continuous-wave single-mode blue-emitting laser diodes operating with over 23% wall plug efficiency and over 750 mW output power, which represent the highest values reported to date. Furthermore, we demonstrate continuous-wave 520 nm green-emitting laser diodes with over 60 mW output power and 1.9% wall plug efficiency. The rapid performance evolution of laser diodes fabricated on non-c-plane orientations is validation of the benefits resulting from increased electron–hole overlap, reduced effective hole mass, and increased design flexibility.

We report the demonstration of an infrared avalanche photodetector that uses an InGaAs absorption layer and a Si avalanche multiplication layer bonded by wafer fusion. Photocurrent measurements of the silicon heterointerface photodetector showed high response to 1.3 μm light and gains of up to 130. Frequency response measurements for the detectors yielded 3 dB bandwidth products of up to 81 GHz.

We report the first N-p-n heterojunction bipolar transistor (HBT) using a (Ga,In)P/GaAs heterojunction emitter on a GaAs base. This combination is of interest as a potential alternate to (Al,Ga)As/GaAs, because of theoretical predictions of a larger valence band discontinuity and a smaller conduction band discontinuity, thus eliminating the need for grading of the emitter/base junction. The structure was grown by molecular beam epitaxy, with the base doping ( -lOI9cm -3 ) far exceeding the n-type doping ( -5 * "ern-') of the (Ga,In)P wide gap emitter (EE = 1.88 eV). Common-emitter current gains of 30 were attained at a current density of 3000 A/cm2, the highest current density achieved without burnout.