No abstract

No abstract

We report a low-temperature process for covalent bonding of thermal SiO 2 to plasma-enhanced chemical vapor deposited (PECVD) SiO 2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer of 60 nm demonstrates sufficient capability for gas byproduct diffusion and absorption, leading to a high surface energy of 2.65 J/m 2 after a 2-h 300°C anneal. O 2 plasma treatment and surface chemistry optimization in dilute hydrofluoric (HF) solution and NH 4 OH vapor efficiently suppress the small-size interfacial void density down to 2 voids/cm 2 , dramatically increasing the wafer-bonded device yield. Bonding-induced strain, as determined by x-ray diffraction measurements, is negligible. The demonstration of a 50 mm InP epitaxial layer transferred to a silicon-on-insulator (SOI) substrate shows the promise of the method for wafer-scale applications.

We report the demonstration of an infrared avalanche photodetector that uses an InGaAs absorption layer and a Si avalanche multiplication layer bonded by wafer fusion. Photocurrent measurements of the silicon heterointerface photodetector showed high response to 1.3 μm light and gains of up to 130. Frequency response measurements for the detectors yielded 3 dB bandwidth products of up to 81 GHz.