Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications

Volz, Kerstin; Ludewig, Peter; Stolz, W.

doi:10.1016/bs.semsem.2019.07.003

Cited by 2 publications

(4 citation statements)

References 39 publications

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“…Alternative approaches have been developed; native III–V substrates, flip-chip integration, direct or hybrid wafer bonding, and epitaxial regrowth have all proven their viability at the cost of increased (and, depending on the target industry, potentially prohibitive) fabrication complexity and costs. As such, interest in direct epitaxial integration has been increasing, with techniques such as bulk and graded buffers, , dislocation filtering superlattices, , rapid thermal annealing, or selective area epitaxy − explored as potential solutions.…”

Section: Introductionmentioning

confidence: 99%

“…Alternative approaches have been developed; native III−V substrates, flip-chip integration, 13 direct or hybrid wafer bonding, 14 and epitaxial regrowth 15 all proven their viability at the cost of increased (and, depending on the target industry, potentially prohibitive) fabrication complexity and costs. As such, interest in direct epitaxial integration has been increasing, with techniques such as bulk and graded buffers, 16,17 dislocation filtering superlattices, 18,19 rapid thermal annealing, or selective area epitaxy 20−24 explored as potential solutions. This paper reports on the design, fabrication, and characterization of an InGaAs-based resonant cavity-enhanced photodetector (RCE PD) monolithically integrated onto a nominal 300 mm Si(001) substrate in a metal−organic chemical vapor deposition (MOCVD) reactor by incorporation of a bulk GaAs buffer layer and an optimized thermal cycle annealing process.…”

Section: Introductionmentioning

confidence: 99%

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InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodetector Fabricated on a Nominal Si(001) Substrate for Near- and Short-Wavelength Infrared Applications

Letka,

Martin,

Massara

et al. 2023

ACS Photonics

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The III−V materials offer superior optoelectronic performance that makes them an attractive choice for integration into cheap and ubiquitous Si-based technologies, contingent upon addressing the consequences of the prohibitively large lattice constant mismatch between the two material systems. We present a near-infrared (NIR) resonant cavity-enhanced photodetector (RCE PD) monolithically integrated onto a nominal Si(001) substrate and incorporating a thin InGaAs/GaAsP strained-layer superlattice acting as the absorber, as well as five repetitions of GaAs/AlGaAs distributed Bragg reflectors providing resonant enhancement. The photodetector was metal− organic chemical vapor deposition-grown onto the Si(001) substrate using a buffer incorporating simultaneously a GaAs bulk layer and the distributed Bragg reflector (DBR) stack, a two-step growth temperature sequence, and an optimized thermal cycle annealing process, with a total structure thickness of 2.6 μm. The device demonstrates 13−21% internal quantum efficiency against the theoretical maximum of 39%, a result that is easily extendable via the addition of DBR pairs or other reflectors. Thanks to the thin absorber design inherent to the RCE PD architecture, the dark current density of the Si-based device is reduced to the same order of magnitude (∼10 −8 A cm −2 ) as an identical structure grown on a lattice-matched GaAs substrate. In general, the promising structural and optoelectronic results for this device represent a viable track to direct monolithic integration of III−V materials onto Si wafers, while the tunability of the InGaAs/GaAsP superlattice system opens up the potential for extended NIR and short-wavelength infrared coverage.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodetector Fabricated on a Nominal Si(001) Substrate for Near- and Short-Wavelength Infrared Applications

Letka,

Martin,

Massara

et al. 2023

ACS Photonics

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“…The growth of III-nitride materials on Si, closely related to the field of LEDs and HEMT, is excluded in this review, and the recent overview of nitride-on-Si can be found in following articles [57][58][59]. In addition, the dilute nitride materials, such as GaNAsP, have attracted considerable interest recently because of their advantages, such as the direct bandgap property and the lattice-matched growth on Si [60]. Particularly, the growth of lattice-matched GaNAsP-based materials on Si or GaP/Si eliminates an issue of the generation of misfit and threading dislocations [61].…”

Section: Introductionmentioning

confidence: 99%

“…Although the growth of dilute materials on Si is an emerging field in terms of monolithic integration, the physics and growth are quite different from III-V (GaAs and InP), thereby the growth of dilute materials on Si is excluded in this review. The overview for dilute material can be found elsewhere [60,61,68,69].…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications

Cited by 2 publications

References 39 publications

InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodetector Fabricated on a Nominal Si(001) Substrate for Near- and Short-Wavelength Infrared Applications

InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodetector Fabricated on a Nominal Si(001) Substrate for Near- and Short-Wavelength Infrared Applications

Heteroepitaxial Growth of III-V Semiconductors on Silicon

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