Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)

Chen, Kevin J.; Akeyoshi, T.; Maezawa, Koichi

doi:10.1109/55.386032

Cited by 44 publications

(20 citation statements)

References 6 publications

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“…Among the di erent nanoelectronic devices discovered and studied so far, the resonant tunnelling diode (RTD) [3][4][5] occupies a prominent position. Its intriguing properties are its extreme compactness, picosecond switching speed, its non-monotonic voltage-current characteristics, and its possible monolithic and vertical integration with GaAs FETs [6]. In this paper, we demonstrate that with RTDs the number of devices needed to build a CNN cell can be reduced while, at the same time, increasing the functional capabilities and processing speed.…”

Section: The Resonant Tunnelling Diodementioning

confidence: 95%

Cellular neural networks based on resonant tunnelling diodes

Hanggi

Chua

2001

Circuit Theory & Apps

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SUMMARYResonant tunnelling diodes (RTDs) have intriguing properties which make them a primary nanoelectronic device for both analogue and digital applications. We propose two di erent types of RTD-based cells for the cellular neural network (CNN) which exhibit superior performance in terms of complexity, functionality, or processing speed compared to standard cells. In the ÿrst cell model, the resistor of the standard cell is replaced by an RTD, which results in a more compact and versatile cell which requires neither self-feedback nor a non-linear output function, and allows three stable equilibrium points. If a resonant tunnelling transistor (RTT) is used instead of the RTD, the dynamics can be controlled through its gate voltage as an additional network parameter. In a majority of CNN applications, bistable cells are su cient. Utilizing RTD-based bistable logic elements to store the state of the cell, switching occurs almost instantaneously as virtually no charge transfer is necessary, and it is possible to implement non-linear connections in a straightforward manner. Hence, it turns out that RTD-based CNNs are tailor-made for the implementation of extremely fast bipolar operations and non-linear templates. The ideas presented in this paper may also be beneÿcially applied to other types of circuits and systems such as A=D converters or sigma-delta modulators.

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Section: The Resonant Tunnelling Diodementioning

confidence: 95%

Cellular neural networks based on resonant tunnelling diodes

Hanggi

Chua

2001

Circuit Theory & Apps

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“…This paper explores basic logic circuit design using RTDs along with conventional devices like MOSFETs. Recent advances in fabrication, particularly in molecular beam epitaxy have made possible the co-integration of RTDs with a number of conventional devices like MOSFETs (Woodward et al 1987), HBTs (Seabaugh et al 1993), and FETs (Chen et al 1995). Fabrication of Schottky/RTD circuits with a view on process technology is discussed by Lei et al (1996).…”

Section: Introductionmentioning

confidence: 98%

QMOS digital logic circuit design

Koshy¹,

Balsara²

2000

International Journal of Electronics

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This paper presents results of work to explore the feasibility of using resonant tunnelling diodes (RTDs) and conventional MOSFETs for the development of digital logic circuits. Based on the use of RTDs and MOSFETs, two di erent logic design stylesÐ ® xed pull-down and ® xed pull-upÐ are proposed and evaluated. Fixed pull-up gates perform better than their CMOS counterparts with similar device sizes. Since the proposed ® xed pull-down style avoids the use of series MOSFETs, for large fan-in gates it yields signi® cantly better performance than the corresponding CMOS gates.

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“…5b). The green area corresponds to the region of feasible FF that has been derived theorically through (3)(4)(5)(6)(7)(8)(9)(10)(11)(12). The black points represent the points obtained after performing HSPICE simulations.…”

Section: B Multistability Constraintsmentioning

confidence: 99%

“…Expressions (3)(4)(5)(6)(7)(8)(9)(10)(11)(12) have been employed to analyze how the DC operation of a ternary inverter is modified when some key parameters are changed. HFET and typical parameters for the RTDs from the LOCOM technology have been used.…”

Section: B Multistability Constraintsmentioning

confidence: 99%

“…1a: two regions of positive (I and III) and one of negative (II) differential resistance. Circuit applications of RTDs are mainly based on the MOnostable-BIstable Logic Element (MOBILE) [2][3][4]. The basic MOBILE is a rising edge triggered current controlled gate which consists of two RTDs (the load and driver RTDs) connected in series and driven by a switching bias voltage (V bias ).…”

Section: Introductionmentioning

confidence: 99%

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Limits to a correct operation in RTD-based ternary inverters

Núñez

Quintana

Avedillo

2008

2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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Abstract-Multiple-valued Logic (MVL) circuits are one of the most attractive applications of the Monostable-to-Multistable transition Logic (MML), and they are on the basis of advanced circuits for communications. However, a proper design is not inherent to the usual MML circuit topologies. This paper analyses the case of an MML ternary inverter, and determines the relations that circuit representative parameters must verify to obtain a correct behaviour.

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Monolithic integration of resonant tunneling diodes and FET's for monostable-bistable transition logic elements (MOBILE's)

Cited by 44 publications

References 6 publications

Cellular neural networks based on resonant tunnelling diodes

Cellular neural networks based on resonant tunnelling diodes

QMOS digital logic circuit design

Limits to a correct operation in RTD-based ternary inverters

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