2005
DOI: 10.1109/tcsii.2004.840111
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Monolithic large-signal transimpedance amplifier for use in multi-gigabit, short-range optoelectronic interconnect applications

Abstract: Abstract-A novel large-signal transimpedance amplifier frontend, intended for monolithic integration with a Si p-i-n diode and employing HBT-CMOS technology for use in short-range optoelectronic interconnects is proposed. Simulated bandwidth and gain are 4 Gbits/s and 43 dB, respectively, while driving a 100-fF load to TTL voltage levels.

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Cited by 7 publications
(2 citation statements)
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“…It is well known that the TIA mandates the performance optimisation of high gain, wide bandwidth, low input impedance, low noise and low power consumption. Conventionally, voltage‐mode (VM) inverter (INV) TIAs are frequently employed for this purpose [2]. However, the bandwidth and noise of INV‐TIAs can severely deteriorate even with small variation in the parasitic input capacitances.…”
Section: Introductionmentioning
confidence: 99%
“…It is well known that the TIA mandates the performance optimisation of high gain, wide bandwidth, low input impedance, low noise and low power consumption. Conventionally, voltage‐mode (VM) inverter (INV) TIAs are frequently employed for this purpose [2]. However, the bandwidth and noise of INV‐TIAs can severely deteriorate even with small variation in the parasitic input capacitances.…”
Section: Introductionmentioning
confidence: 99%
“…CMOS appears to be the best candidate for fully integrated TIA design due to its cost, power, integration and manufacturability advantages and provides reasonable speed, noise performances at the same time. Numerous CMOS TIAs for multigigabit/s, 10Gb/s or even higher data rate applications have been realized [43][44][45][46][47][48][49][50].…”
Section: List Of Figuresmentioning
confidence: 99%