Monolithic microwave amplifiers formed by ion implantation into LEC gallium arsenide substrates

Driver, M.C.; Wang, Shing-Kuo; Przybysz, J.X.; Wrick, V. L.; Wickstrom, R.A.; Coleman, Elane; Oakes, J. G.

doi:10.1109/t-ed.1981.20309

Cited by 21 publications

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“…In addition to providing excellent control of the active layer thickness and doping density, it allows the use of a self-aligned fabrication technology. Ion implantation is also a desirable process for the localized introduction of dopants for high speed planar integrated circuit applications (4,5). Since implantation disorders the crystal lattice, the substrate must be annealed to repair the damage and to activate the implanted species.…”

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confidence: 99%

Plasma Deposited Silicon Nitride for Gallium Arsenide Encapsulation

Valco

Kapoor

1987

J. Electrochem. Soc.

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The composition and annealing characteristics of plasma deposited silicon nitride encapsulating films on ion implanted gallium arsenide have been investigated. X-ray photoelectron spectroscopy was employed to study the surface of the semi-insulating GaAs substrates after cleaning in organic solvents, and HCt, HF, and NH4OH solutions prior to encapsulation. The composition of silicon nitride films deposited with 30 kHz RF excitation was determined through Auger electron spectroscopy and infrared spectroscopy as a function of the deposition conditions. Most of the films had a silicon to nitrogen ratio between 0.71 and 0.76 and a hydrogen concentration between 10 and 19%. GaAs substrates implanted with silicon at 100 keV to a dose of 5 • 1012 cm -2 and annealed at 800~ had peak electron concentrations of 1.7 • 1017 cm -3 at a depth of 0.1 ~m. High frequency encapsulated GaAs substrates implanted at 100 keV to a dose of 5 • 101~ cm -2 and 150 keV to a dose of 3 • 1012 cm -~ had peak electron concentrations of 1.7 • 1017 cm -3 and 9.6 • 101G cm 3 at depths of 0.1 and 0.12 ~tm, respectively. A Schottky-gate field effect transistor with a 3 ~m gate length which was fabricated using the silicon nitride encapsulant had a transconductance of 30 mS/ram.

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confidence: 99%