Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

Damilano, B.; Brault, J.; Huault, T.; Natali, F.; Demolon, Pierre; Mierry, P. de; Chenot, Sébastien; Massies, J.

doi:10.1063/1.2982097

Cited by 33 publications

(22 citation statements)

References 14 publications

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“…Other approaches utilize impurity‐mediated luminescence producing additional peaks in the total emission spectra , “passive” ARs optically pumped by the emission of the main AR in a LED structure , and the combined ARs grown on different facets of a profiled template . The approach based on the impurity luminescence requires incorporation of a large amount of deep‐level impurities that may induce non‐radiative carrier recombination negatively affecting both the electrical properties of the conductive layers and emission efficiency of ARs.…”

Section: Introductionmentioning

confidence: 99%

Multi‐color monolithic III‐nitride light‐emitting diodes: Factors controlling emission spectra and efficiency

Karpov¹,

Cherkashin

Lundin

et al. 2015

Physica Status Solidi (a)

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InGaN-based monolithic multi-color light emitting diodes (LEDs) are studied both experimentally and theoretically with the focus on factors controlling their emission spectra and efficiency. A number of LEDs with different designs of spacers separating active regions providing blue and green light emission is examined. Unexpected behavior of the multi-color LED efficiency is explained in terms of a simple balance model, assuming some degradation of materials quality of the green active region grown on top of the blue one. Electrical properties of spacers separating different active regions in the multi-color LED structures are identified as the major factor controlling the contributions of these active regions to the total emission spectrum. Correlations between the type and level of the spacer doping and the emission spectrum are found by simulations. Alternative ways of the spectral control by using polarization doping in the graded-composition InGaN and AlGaN alloys used as the spacers are suggested. Color characteristics of blue/green dual-wavelength LEDs are also measured and discussed, regarding their possible applications.

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Section: Introductionmentioning

confidence: 99%

Multi‐color monolithic III‐nitride light‐emitting diodes: Factors controlling emission spectra and efficiency

Karpov¹,

Cherkashin

Lundin

et al. 2015

Physica Status Solidi (a)

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“…Most of these approaches suffer from insufficient luminescence at 470-500 nm which significantly influences color rendering. Using additional InGaN quantum wells (QW) to convert blue photons to longer wavelength by absorbing and reemitting is a promising alternative [4,5]. Especially for additional emission in the blue-green wavelength region, the approach is very attractive as demonstrated by simulations.…”

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confidence: 99%

Monolitically grown dual wavelength InGaN LEDs for improved CRI

Stauß

Mandl

Rode

et al. 2011

Phys. Status Solidi C

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In this study we have grown dual wavelength epitaxial LED layer structures by MOCVD. A secondary InGaN MQW is added to the layer structure to optically convert a certain fraction of photons which have been electrically generated in the primary InGaN‐MQW. Photoluminescence spectra are compared to electrical ThinGaN® chip operation data. The emission spectra clearly display two peaks. The height of the peak generated by the converted photons was adjusted by the number of QWs used in the secondary MQW. Additionally, the influence of the optical ThinGaN® light extraction design on the final emission spectrum has been investigated. These emission spectra are discussed in dependence of current density and temperature. Finally, dual MQW ThinGaN® devices have been assembled into phosphor converted white high‐power LED packages. The measured spectra confirm improved CRI values and are compared to simulated data. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The recent rapid progress has been achieved in GaN-based white light-emitting diodes (LEDs) [1][2][3][4][5][6][7][8]. Owing to their long lifetime, small size, and low energy consumption, they are quite promising for general illumination.…”

Section: Introductionmentioning

confidence: 99%

Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

Wang

Jia

et al. 2010

Sci. China Phys. Mech. Astron.

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Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

Cited by 33 publications

References 14 publications

Multi‐color monolithic III‐nitride light‐emitting diodes: Factors controlling emission spectra and efficiency

Multi‐color monolithic III‐nitride light‐emitting diodes: Factors controlling emission spectra and efficiency

Monolitically grown dual wavelength InGaN LEDs for improved CRI

Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

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