Monolithic Wilkinson power divider on CMOS grade silicon with a polyimide interface layer for antenna distribution networks

Ponchak, George E.; Bacon, A.; Papapolymerou, John

doi:10.1109/lawp.2003.819043

Cited by 9 publications

(9 citation statements)

References 7 publications

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“…Dividers are structures of great practical interest [1,2,3]. A current divider has to distribute the complex current on the terminal loads according to the desired current-split ratios and the desired phase differences between the currents.…”

Section: Introductionmentioning

confidence: 99%

Boolean Particle Swarm Optimization of 3-branch GSM/DCS/UMTS current dividers by using Artificial Immune System

Zaharis

2008

IEICE Electron. Express

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Abstract:A new binary version of Particle Swarm Optimization called Boolean PSO (BPSO) is applied in order to design current dividers that distribute the current to three output ports and resonate simultaneously at three frequencies. The BPSO is based on the negative selection, which is one of the basic processes in an Artificial Immune System (AIS). The optimizer must satisfy specific requirements at all resonant frequencies, concerning the impedance-matching bandwidth and the distribution of the complex current on unmatched real or complex terminal loads. The dividers are considered to feed mobile communications antenna arrays and are optimized for GSM/DCS/UMTS operation. The optimization is performed by applying both the BPSO and a conventional PSO. The comparison shows that the BPSO is more efficient because it has the ability to produce structures with better frequency response. Keywords: particle swarm optimization, artificial immune system, mobile communications, multi-frequency dividers Classification: Microwave and millimeter wave devices, circuits, and systems Lett., vol. 49, pp. 2138-2144, Sept. 2007 A. Marandi, F. Afshinmanesh, M. Shahabadi, and F. Bahrami, "Boolean particle swarm optimization and its application to the design of a dualband dual-polarized planar antenna," References

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Section: Introductionmentioning

confidence: 99%

Boolean Particle Swarm Optimization of 3-branch GSM/DCS/UMTS current dividers by using Artificial Immune System

Zaharis

2008

IEICE Electron. Express

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“…One of the most significant characteristics with the Wilkinson power divider is that all of its ports can be matched well and hence a good isolation between the output ports can be achieved [1]. Because of these advantages over the other types of power dividers such as T-junction dividers, and resistive dividers, there have been many efforts to realize the Wilkinson structure using MMICs technology [2][3][4] There have been several efforts to fabricate MMICs on silicon because of its advantages over GaAs such as existence of natural oxide, low cost, and high thermal conductivity. However, the use of standard CMOS grade silicon with resistivity typically on the order of 0.5 to 20Ω cm for MMIC applications has been limited by its high loss, especially, at an RF frequency range.…”

Section: Introductionmentioning

confidence: 99%

“…However, the use of standard CMOS grade silicon with resistivity typically on the order of 0.5 to 20Ω cm for MMIC applications has been limited by its high loss, especially, at an RF frequency range. The insertion of polyimide layers between the silicon substrate and circuits [3], or the use of circuits implemented on high resistivity silicon (HRS) (ρ >2500Ω cm) whose aperture regions are removed by micromachining [4] has been reported to suppress the loss coming from the substrate, but these configurations may these would not only degrade package density of circuits, but also make the integration with active devices such as high electron mobility transistors (HEMTs) difficult at the same wafer level.…”

Section: Introductionmentioning

confidence: 99%

Wilkinson power divider for antenna distribution networks

Yoon

Jose

et al. 2005

SPIE Proceedings

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The design, fabrication and experimental evaluation of a Ku-Band 3 dB Wilkinson power divider on high resistivity silicon (HRS) are presented in this paper. The measured insertion for the powder divider is 3.5 dB and isolation between port 2 and 3 is 12 dB respectively. CPW lines were fabricated on two different silicon substrates (HRS, and CMOS grade silicon) and it is shown that the loss characteristics for a 50Ω CPW patterned on the surface-stabilized HRS is only 0.16 dB at 15GHz. In contrast, the insertion loss for CPW line on CMOS grade silicon is 8.3 dB at 15 GHz. Thus, the low insertion loss could be achieved by stabilizing the surface of HRS with a thin polysilicon layer.

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“…One of the most significant characteristics of the Wilkinson power divider is that all of its ports can be well matched; hence, a good isolation between the output ports can be achieved [1]. Because of these advantages over the other types of power dividers such as T-junction dividers and resistive dividers, there have been many efforts to realize the Wilkinson structure using MMIC technology [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…However, in spite of its low cost and high thermal conductivity, critical characteristics for high-power device operation, the use of standard CMOS-grade silicon with resistivity typically on the order of 0.5 to 20⍀ cm for MMIC applications has been limited by its high loss, especially in the RF frequency range. Suggestions for the reduction of insertion loss attributed to silicon have included the insertion of a polyimide layer between the standard silicon and circuits [3], or the use of circuits implemented on HRS ( Ͼ 2500⍀ cm) whose aperture regions are removed by micromachining [4]. However, these approaches would not only degrade package density of circuits, but would also make integration with active devices such as high- In general, to realize metal circuits on an HRS substrate, an oxide layer (SiO 2 ) must be grown before the metal deposition in order to suppress a DC leakage current.…”

mentioning

confidence: 99%

Design of a Ku-band Wilkinson power divider on surface-stabilized high-resistivity Si substrates

Yoon

Abraham

et al. 2005

Microw. Opt. Technol. Lett.

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of 5.8 GHz by 0.2%. The output power is measured to be about Ϫ25.17 dBm, using an Agilent E4440A spectrum analyzer and a double-ridged horn antenna (gain ϭ 17 dBi) as a reference antenna placed at a distance of 2 m. The effective isotropic radiated power (EIRP) corresponding to the above data is 19.2 mW [7]. The simulated and measured radiation patterns for the E-plane and H-plane are shown in Figure 4. The simulated radiation patterns are calculated by using the gap-source technique with the commercial EM simulator HFSS, considering the complete activefeedback antenna, which has same layout, except with an active transistor. Both of the radiation patterns are similar to that of the ordinary microstrip patch antenna. The received cross-polarizations in the E-plane and H-plane of the AIA are approximately Ϫ17 and Ϫ13 dB lower than the maximum co-polarized radiation, respectively. The measured co-polarized radiation patterns in the E-plane and H-plane have a similar trend with those of the simulated results. As seen in Figure 4(b), the radiation pattern in the H-plane is asymmetrical due to the asymmetrical presence of the distributed oscillator-feedback circuitry. CONCLUSIONIn this paper, a feedback-antenna oscillator using a T-shaped microstrip coupled patch antenna has been proposed at 5.8 GHz. The fabricated active antenna was investigated and a comparison of the measured and simulated results was presented. The active antenna utilizes electromagnetic coupling between the T-shaped microstrip and the patch in order to close the feedback loop. The oscillator antenna achieves an EIRP of 19.2 mW and the crosspolarization levels in the E-plane and H-plane are less than Ϫ17 and Ϫ13 dB, respectively. Since the T-shaped microstrip-coupled antenna shows a good DC isolation, we need no a chip capacitor is unnecessary; thus, resulting in a low-cost and easy-to-fabricate active transmitting system. To date, gallium arsenide (GaAs) has been used predominantly in the development of MMICs, since its semi-insulating properties and high electron mobility make it suitable for microwave applications. However, the absence of natural oxide, a small wafer size of less than four inches in diameter with the resultant high fabrication cost, and the low thermal conductivity of GaAs are still problematic in the development of MMICs [5].If silicon could be used as a substrate material, many of the drawbacks of using GaAs would be overcome. In addition, by using silicon as the substrate material, standard CMOS fabrication processes can be employed. However, in spite of its low cost and high thermal conductivity, critical characteristics for high-power device operation, the use of standard CMOS-grade silicon with resistivity typically on the order of 0.5 to 20⍀ cm for MMIC applications has been limited by its high loss, especially in the RF frequency range. Suggestions for the reduction of insertion loss attributed to silicon have included the insertion of a polyimide layer between the standard silicon and circuits [3], or the use of circu...

show abstract

Monolithic Wilkinson power divider on CMOS grade silicon with a polyimide interface layer for antenna distribution networks

Cited by 9 publications

References 7 publications

Boolean Particle Swarm Optimization of 3-branch GSM/DCS/UMTS current dividers by using Artificial Immune System

Boolean Particle Swarm Optimization of 3-branch GSM/DCS/UMTS current dividers by using Artificial Immune System

Wilkinson power divider for antenna distribution networks

Design of a Ku-band Wilkinson power divider on surface-stabilized high-resistivity Si substrates

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