A monolithically active-passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time-bandwidth product of 0.53 are obtained.