Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

Abstract

We have demonstrated a 1.60 µm ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 • × 10.6 • , respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

1.55-μm Sidewall Grating DFB Lasers Integrated With a Waveguide Crossing for an Optical Beam Forming Network

“…QWI technology is a relatively flexible fabrication route for forming PICs, however careful preparation of the sample and high temperature annealing are required. The third method is to employ asymmetric twin-waveguide (ATG) technology [7]- [9]. Compared with conventional QW laser wafer structures, ATG wafer structures include a low-loss passive waveguide with a lower refractive index beneath the active QW waveguide.…”

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

“…The selective MOVPE technique is very attractive for fabricating advanced devices such as buried heterostructure lasers [1,2] and integrated optical circuits [3,4] of InPbased materials. The basic advantage of selective MOVPE technology is that the bandgap energy and the thickness of selectively grown layers can be easily controlled by changing the dielectric mask design [5][6][7].…”

Fabrication and characterization of InGaAsP∕InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching

“…The rectangular ring cavity consists of four straight waveguides and four TIRMs formed by etching down to the middle of the space layer, as shown in Fig. 8 For this structure, 3 m wide active ridge waveguide is used in the entire ring cavity. To avoid the optical and electrical losses from the active waveguide and scattering loss from the passive waveguide, a double shallow-ridge waveguide, as shown in Fig.…”