Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Shi, Ming; Saint-Martin, Jérôme; Bournel, A.; Querlioz, Damien; Wichmann, Nicolas; Bollaert, S.; Danneville, F.; Dollfus, Philippe

doi:10.1016/j.sse.2013.05.004

Cited by 10 publications

(6 citation statements)

References 42 publications

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“…From the viewpoint of the circuit design, NF min (i.e., a ratio of signal to noise at the gate divided by a corresponding ratio at the drain) is the most important parameter related to the noise. Therefore, we calculate NF min by using the noise spectral densities and the Y ‐parameters, according to the following formulas :

N {normalF}_{\min} = 1 + 2 R_{normaln} true(Y_{cor} + Y_{opt} true),

R_{normaln} = \frac{P}{{| Y_{21} |}^{2}}, Y_{cor} = R e true[Y_{11} - Y_{21} \frac{S_{idig}^{*}}{S_{id}} true], Y_{opt} = \sqrt{A - B},

A = {| Y_{21} |}^{2} \frac{S_{ig}}{S_{id}} + {| Y_{11} |}^{2} - R e true[Y_{11} Y_{21}^{*} \frac{S_{id} S_{ig}}{S_{id}} true],

B = {I m}^{2} true[Y_{11} + Y_{21}^{*} \frac{S_{id} S_{ig}}{S_{id}} true],

where R n is the noise resistance, Y cor is the correlation admittance (associated to the correlation between the gate and drain noise sources), and Y opt is the parallel optimum matching admittance for satisfying the minimum noise conditions. The associated power gain G ass corresponding to the minimum noise condition is also calculated as follo...…”

Section: Simulation Methodsmentioning

confidence: 99%

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

Takahashi

Hatsushiba

Fujikawa

et al. 2016

Physica Status Solidi (a)

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We study comparatively the RF and the noise characteristics for the In0.7Ga0.3As, InAs/AlSb and InSb high electron mobility transistors (HEMTs) by using the quantum corrected Monte Carlo (QC‐MC) simulation. The increase in the current fluctuation <ΔIds2> with Vds is caused by the increase in the electron velocity variance σnormalv2 (i.e., the electron heating); this indicates clearly that the low Vds operation is essential to lowering <ΔIds2>. The smaller electron effective m* results in the larger σnormalv2 and thus the larger <ΔIds2>, yet it allows the low Vds operation through the higher μ. The InSb HEMT with the channel of the smallest m* overcomes the inherent nature of the larger <ΔIds2> through the ability of the lower Vds operation along with the larger gm. Eventually, the InSb HEMT shows the smallest minimum noise figure NFmin of 0.31 dB with the associated gain Gass of 12.4 dB at 100 GHz and the highest cutoff frequency fT of 1.8 THz at Vds of 0.2 V. These results indicate the potential of the InSb HEMT for the ultra‐low power, ultra‐high frequency, and the ultra‐low noise transistor.

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N {normalF}_{\min} = 1 + 2 R_{normaln} true(Y_{cor} + Y_{opt} true),

R_{normaln} = \frac{P}{{| Y_{21} |}^{2}}, Y_{cor} = R e true[Y_{11} - Y_{21} \frac{S_{idig}^{*}}{S_{id}} true], Y_{opt} = \sqrt{A - B},

A = {| Y_{21} |}^{2} \frac{S_{ig}}{S_{id}} + {| Y_{11} |}^{2} - R e true[Y_{11} Y_{21}^{*} \frac{S_{id} S_{ig}}{S_{id}} true],

B = {I m}^{2} true[Y_{11} + Y_{21}^{*} \frac{S_{id} S_{ig}}{S_{id}} true],

Section: Simulation Methodsmentioning

confidence: 99%

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

Takahashi

Hatsushiba

Fujikawa

et al. 2016

Physica Status Solidi (a)

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“…Small signal analysis and noise analysis were performed in this research, and the findings were obtained. Many studies have addressed the problem of extracting noise parameters from a one‐dimensional set of data, and numerous strategies have been developed 3,4,9 . These varied approaches, however, have not yet been thoroughly compared.…”

Section: Introductionmentioning

confidence: 99%

“…GaN devices are becoming more widely accepted as a technology with many advantages for use in power electronics, radio frequency (RF), and digital applications, 1 as well as in the automotive industry. 2 These advantages include providing fail-safe operation and a simplistic circuit architecture for power switching applications, 3 as well as enabling simple design for RF/microwave circuits. 4 Due to its unique material features, including higher bandgap and superior transport parameters, GaN technology has the unique ability to work in both extremely high temperatures, high-power and highfrequency requirement of integrated chips.…”

Section: Introductionmentioning

confidence: 99%

“…Many studies have addressed the problem of extracting noise parameters from a one-dimensional set of data, and numerous strategies have been developed. 3,4,9 These varied approaches, however, have not yet been thoroughly compared. The results of noise characteristics, such as current and voltage spectral densities, were investigated and analysed using a green's function approach, which provides detailed insight on the crystal's defects (1/f noise sources), GR (generation (G)-recombination (R))-mechanisms, and shot noises happened due to the Low Frequency Noise spectra, that is the fluctuations due to voltage or current sources at the terminals of gate and drain.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Janakiraman

Mohanbabu

Maheswari

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this article, vertical CAVET with boron-doped GaN layer as current blocking layer (CBL) for AlGaN/GaN is proposed in this study, and different electrical characteristics of the devices, such as DC (I ds À V ds ), small-signal radio frequency and high-frequency microwave noise performances, are characterised using Synopsys TCAD simulations. The vertical CAVET AlGaN/GaN metal-insulated semiconductor field effect transistor (MIS-HEMT) has been found to have a high threshold V T = 6.36 V, drain saturation current, I ds,sat = 3.41 kA/cm 2 , reduced OFF-state current <10 À12 and improved high frequency and noise performances. The findings provide insight on noise sources and provide information on how to improve GaN transistor noise performance. Its useful characterisation tool for learning more about the imperfections in advanced AlGaN/GaN MIS-HEMTs and how they evolve. A twoport noise equivalent-circuit description is used to calculate data for noise.Using data from noise and scattering parameters that have been measured, we evaluated the effect of noise sources due to gate and drain, as well as their correlation. The devices exhibit a minimum noise figure (NF min ) and an equivalent noise resistance (R n ) of 1.21 dB and 20 Ω at 20 GHz, with V gs = 5 V and V ds = 10 V, which is small and appropriate for low-noise amplifiers with a wide bandwidth. The maximum output power density P out of 23 dBm and the maximum PAE of 63.3% are achieved for GaN V-shaped CAVET MIS-HEMTs with V ds = 10 V at 3.12 GHz is achieved. A comparison is made between the noise performance of conventional HEMTs, MIS-HEMTs and FETs. The methods for obtaining the noise figure (NF min ) and other noise metrics are then explained and compared with those found in the literature.

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“…The determination of this figure of merit is essential to assess the potential of the device for high-frequency operation. Driven by the ever-growing demand for high-frequency applications, continuous efforts are being made to develop innovative materials and architectures (e.g., high-mobility III-V and Ge channels, high-k dielectrics, and multiple-gates) [1][2][3][4][5]. The intrinsic f T is expected to remarkably increase with decreasing gate length and to be roughly independent of the gate width.…”

Section: Introductionmentioning

confidence: 99%

Effects of Gate-Length Scaling on Microwave MOSFET Performance

2017

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This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length.

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Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Cited by 10 publications

References 42 publications

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Effects of Gate-Length Scaling on Microwave MOSFET Performance

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