Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs

Abstract

Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 μm region of interest for atmospheric remote sensing applications.

Impact Ionization in InAs Electron Avalanche Photodiodes

“…Arguably, the work most comparable to this new experimental investigation is that of Satyanadh et al [21], who modeled avalanche multiplication in InAs at room temperature using a Monte Carlo model. Unfortunately, drawing comparisons with their results is difficult for two reasons.…”

“…This should make operation at high bit rates possible, even with wide depletion regions such as those characterized in this paper. Based on the saturated electron drift velocity modeled by Satyanadh et al [21] and the saturated hole drift velocity of In 0.53 Ga 0.47 As, the maximum bit rate achievable without intersymbol interference can be estimated. It is concluded that an InAs p-i-n diode with a 2.5-µm-wide intrinsic region could support bit rates up to ∼20 Gb/s.…”

“…Photomultiplication characteristics measured and modeled for the P3 diode structure, including the Me measured in this paper (•),theMe modeled with the α from Brennan and Mansour [14] setting β = 0 (crossed line), and both the Me (dot-dashed line) and M h (dashed line, dotted only where β is extrapolated) using α (extrapolated) and β from Mikhailova et al [13]. Also shown is the M mixed modeled by Satyanadh et al [21] for a p-i-n diode with a4-µm-wide intrinsic width (solid black line).…”

Review of electron transport properties in bulk InGaAs and InAs at room temperature

“…6 and 7 as a function of electric field. The MC results are compared with different experimental and theoretical data present in the literature [13,14,[42][43][44][45][46][47][48][49][50][51]. For an electric field lower than about 0.15 kV/cm, the velocity increases linearly and the carriers remain in the same valley (Fig.…”

Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

“…In a strong applied electric field, E, carriers can gain enough kinetic energy to ionize dopant impurities at low temperature [9][10][11] and/or to generate electron-hole pairs by interband impact ionization leading to avalanche breakdown [5,12,13], which greatly increases the conductivity. A magnetic field, B, applied perpendicular to the direction of the current flow, can strongly affect these impact ionization processes by increasing the binding energy of electrons bound onto impurities and hence the activation energy and electric field required for impurity ionization [9][10][11]; also, the Lorentz force exerted on the conduction electrons deflects the electron motion away from the direction of the electric field, effectively increasing the electric field required for excitation of electrons across the band gap.…”