Monte Carlo calculation of nonequilibrium phonon distributions related to Raman scattering experiments in Al/GaN

Raguotis, R.; Brazis, R.

doi:10.1109/icton.2011.5970797

Cited by 1 publication

(3 citation statements)

References 13 publications

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“…A direct indicator of LO phonon accumulation is the Raman scattering of light. Existing experimental data on LO phonon number changes in an electric field [11] were compared with the MC simulation data in [10]. Unfortunately the experiment was performed with wurtzite phase crystal while the MC simulations were made for the zinc-blende phase, because, as has been mentioned above, this phase is more convenient for modeling.…”

Section: Discussionmentioning

confidence: 99%

“…The presented novel one-particle Monte Carlo (MC) method has been used previously in [3][4][5][6][7][8][9][10]. Dramatic increases in the number of longitudinal optical (LO) phonons by several orders in comparison with the thermal equilibrium distribution have been obtained.…”

Section: Introductionmentioning

confidence: 99%

“…This effect is expected to produce infrared radiation transforming LO phonons to LA or other lower phonon modes. Existing experimental first-order Raman scattering data in electric field [11] were explained [10] including the phonon-difference LO-TA contributions.…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo simulation of non-equilibrium phonon accumulation in cubic GaN crystal

Raguotis¹,

Bumelienė²

2014

Phys. Scr.

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The novel one-particle Monte Carlo procedure for the simulation of the longitudinal optical phonon distribution accumulation generated by electrons in a high electric field is presented in detail. The phonon and electron distributions are obtained employing novel code in zinc-blend n-type GaN crystals. The main quality of this code is the avoidance of the short-time-step procedure appropriate to the conventional ensemble Monte Carlo method. The maximum value of the phonon distribution function dramatically exceeds the thermal-equilibrium one. The influence of the phonon accumulation on the electron kinetic characteristics of zinc-blend GaN and other features, such as longitudinal optical phonon number inversion with respect to acoustic phonon modes, are discussed.

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Section: Discussionmentioning

confidence: 99%