Monte Carlo Channeling Calculations

Barrett, J.H.

doi:10.1103/physrevb.3.1527

Cited by 688 publications

(122 citation statements)

References 27 publications

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“…We have also used semiempirical charge-state fractions obtained from the CASP program [30]. In order to obtain the ion flux distribution, we have used standard Monte Carlo calculations [33] with thermal vibrations given by = 0.083 Å (root mean square of thermal displacements) according to the Debye temperature T = 490 K extracted from the work of Dygo and collaborators [20].…”

Section: ͑4͒mentioning

confidence: 99%

Electronic energy loss of channeled ions: The giant Barkas effect

et al. 2004

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In this work we have measured the electronic energy loss of 9 Be and 11 B ions for the ͗100͘ and ͗110͘ directions in Si as a function of the incident ion energy. The channeling measurements cover a wide energy range between 100 keV/ amu and 1 MeV/ amu. The Rutherford backscattering technique has been employed in the present experiments. An overall compilation of channeling energy loss values for several ions, including those for He, Li, and O measured previously, provides a clear picture of the Barkas contribution to the stopping power due to valence electrons in the present energy regime. A maximum of the relative contribution occurs for Be ions around 250 keV/ amu while a saturation effect is observed for heavier ions. These results are interpreted in terms of a self-consistent nonlinear calculation based on the transport cross-section approach together with the unitary convolution approximation model, which describe the present data reasonably well at high projectile energies.

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Section: ͑4͒mentioning

confidence: 99%

Electronic energy loss of channeled ions: The giant Barkas effect

et al. 2004

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“…From multiple scattering theory the nonchanneled yield is given by min ϭP(˜c ,m), with the reduced critical angle ˜c given by ˜c ϭaE 1/2 /8 ⑀ 0 Z 1 Z 2 e 2 , where E is the energy of the beam and 1/2 is given by Barrett's critical half-width c B . 10 The fraction P(˜c ,m) of particles scattered outside the reduced critical angle ˜c is given by P(˜c ,m)ϭ͐ ˜c ϱ f 1 (m,˜)˜d˜, which can be determined from numerical integration of the f 1 tables in Sigmund and Winterbon. 11 With c B ϭ7.5 and 5.7 mrad for 2 and 3.5 MeV He ϩ ions in Si, respectively, the values of P(˜c ,m) are about 0.04 and 0.02 for 2 and 3.5 MeV, respectively.…”

Section: Enhanced Dechanneling and Direct Scatteringmentioning

confidence: 99%

Channeling on boron clusters in silicon

Selen

IJzendoorn

Loon

et al. 2001

Journal of Applied Physics

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Low energy ion implantation at high doses of boron (Ͼ10 15 cm Ϫ2 ) in Si is necessary for the fabrication of ultrashallow junctions but can result in the undesirable presence of boron clusters. Values for the dimensions of the lattice distortions in the implanted Si are obtained by comparing the enhanced dechanneling and the direct scattering peak in the region with clusters in a channeled Rutherford backscattering spectrometry spectrum to those from Monte Carlo calculations on a curved crystal structure. Values of about 0.17 and 65 nm are found for the maximum deformation and the length of the distortions in the crystal, respectively, which implies that the lattice distortions extend significantly outside the layer in which the B clusters are supposed to be present.

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“…Within the classical approach several aspects of the problem are fundamental enough that they should be included in some manner in a channeling simulation program. Those aspects that have been discussed by the author previously [3] will be presented only briefly here; others will be presented at greater length.…”

Section: Basic Featuresmentioning

confidence: 99%

“…Thereby, theirs became the first channeling simulation program; since that time, many others have been written [2][3][4][5][6][7][8][9]. This paper will offer a brief review and explanation of the methodology involved in the simulation of channeling of H and heavier ions having energies of 50 keV/amu or above; no attempt will be made to cover the related fields of channeling calculations using semianalytic methods or continuum potentials or of the simulation of lower energy ion scattering phenomena or collision cascades.…”

mentioning

confidence: 99%