Monte Carlo modeling of cathodoluminescence generation using electron energy loss curves

Abstract

Summary: This work demonstrates the validity of approximating cathodoluminescence generation throughout the electron interaction volume by the total electron energy loss profile. The energy loss profiles in multilayer specimens were accurately calculated using the Monte Carlo simulation CASINO. Resolution of cathodoluminescence images can be estimated from the electron beam spot diameter, the electron penetration range, and the minority carrier diffusion length.

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

“…In this way, CL allows a lateral and depth resolved analysis of the distribution of luminescence centers present in the material. It should be noted that, although the CL generation volume is mainly related to the electron penetration range, it is also affected by the minority carrier diffusion, because light is generated not where the e-h pairs are generated, but where they recombine [6]. However, in semiconductor nanostructures, such diffusion is limited by the quantum confinement [7] and surface effects [8].…”

Photon and electron excitation of rare-earth-doped amorphous SiN films

“…CL depends on the electron interaction volume and is determined by the local density of electron-hole (e-h) pairs [10]. The generation of e-h pairs, and subsequent CL emission, can be approximated by the total primary electron energy-loss profile that maximizes at approximately 0.3 R KO where R KO is the Kanaya-Okayama electron penetration range [12,13]. Based on these facts, the maximum electron energy-loss profile for the present samples is estimated to be around 0.6 lm.…”

Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures

“…Each of these processes contributes to the generation of electron-hole pairs. Plasmons can decay into excitons, excitation of valence electrons can produce electron-hole pairs, but the excitation of secondary electrons is the main source of electron-hole pairs 49 . With a cascade process, the secondary electrons which have kinetic energies of 5-10 eV, can be excited and diffused in a spherical region with a depth of a few hundred nanometers for a general semiconductor under an electron beam of several keV.…”