Monte Carlo simulation of 4H-SiC IMPATT diodes

Zhao, J.H.; Gruz̆inskis, V.; Luo, Yi; Weiner, M.; Pan, M.; Shiktorov, P.; Starikov, E.

doi:10.1088/0268-1242/15/11/314

Cited by 37 publications

(26 citation statements)

References 18 publications

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“…2, squares and bullets). The field ionization threshold is much lower as compared with that in IMPATT diodes [8]; this suggests that the NDC might support the formation of high-field domains [5]. Data of Fig.…”

Section: Resultsmentioning

confidence: 87%

Hot-Electron Transport and Microwave Noise in 4H-SiC

Ardaravičius¹,

Liberis²,

Kiprijanovič³

et al. 2005

Acta Phys. Pol. A

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Hot-electron transport and microwave noise are investigated for n-type 4H-SiC (n = 2 × 10 17 cm −3 ) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conductance and field ionization increase with lattice temperature. The results on microwave noise are used to evaluate the effective hot-electron temperature and the hot-electron energy relaxation time.

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Section: Resultsmentioning

confidence: 87%

Hot-Electron Transport and Microwave Noise in 4H-SiC

Ardaravičius¹,

Liberis²,

Kiprijanovič³

et al. 2005

Acta Phys. Pol. A

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“…when the accumulation layer enters the drain contact (see Figs. 5,6). This is the reason for the drain current amplitude elevation at impact ionization conditions.…”

Section: Numerical Resultsmentioning

confidence: 96%

Monte Carlo simulation of THz frequency Gunn effect in GaAs MOSFET with excess of electrons in channel at impact ionization conditions

Gruz̆inskis¹,

Starikov²,

Shiktorov³

2014

Lith. J. Phys.

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The results of Monte Carlo simulation of GaAs MOSFETs under impact ionization conditions in the conduction channel are presented. The main attention is paid to the transistor operation at a positive gate bias when the electron concentration in the channel under the gate considerably exceeds the channel doping level. The stationary characteristics including current voltage relation and velocity, energy and field profiles in the channel are calculated. Also, the drain current noise spectra at various drain biases are presented. The Gunn-effect dynamics in excess of electrons in the channel is investigated. The optimization of transistor geometrical, doping, and biasing parameters for high frequency generation is performed. It is shown that GaAs MOSFET can generate at 325 GHz frequency.

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“…The first two processes conform to the avalanche multiplication stage and the latter two processes conform to the drift stage. Both of the stages are also indicated by Zhao [39] with the Monte Carlo simulation method to the IMPATT diodes and Scharfetter [33] with the self-consistent numerical solutions for equations describing carrier transport, carrier generation and space charge balance to the Read diode oscillator. Comparing Fig.…”

Section: Labeled Inmentioning

confidence: 97%

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

et al. 2014

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Numerical simulation has been made to predict the RF performance of \0001[ direction and \11 " 20[ direction p ? /n/n -/n ? (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the onedimensional current flow. The simulation results show that \0001[ direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (g) for its higher ratio of drift zone voltage drop (V D ) to breakdown voltage (V B ) compared with those for \11 " 20[ direction 4H-SiC IMPATT diode, which lead to highermillimeter-wave power output for \0001[ direction 4H-SiC IMPATT compared to \11 " 20[ direction. However, the quality factor Q for the \11 " 20[ direction 4H-SiC IMPATT diode is lower than that of \0001[ direction, which implies that the \11 " 20[ direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with \0001[ direction 4H-SiC IMPATT diode.

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Monte Carlo simulation of 4H-SiC IMPATT diodes

Cited by 37 publications

References 18 publications

Hot-Electron Transport and Microwave Noise in 4H-SiC

Hot-Electron Transport and Microwave Noise in 4H-SiC

Monte Carlo simulation of THz frequency Gunn effect in GaAs MOSFET with excess of electrons in channel at impact ionization conditions

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

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