Space and ground level electronic equipment with semiconductor devices are always subjected to the deleterious effects by radiation. The study of ion-solid interaction can show the radiation effects of scattering and stopping of high speed atomic particles when passing through matter. This study had been of theoretical interest and of practical important in these recent years, driven by the need to control material properties at nanoscale. This paper is attempted to present the calculations of final 3D distribution of the ions and all kinetic phenomena associated with the ion's energy loss: target damage, sputtering, ionization, and phonon production of alpha (α) particle in Gallium Arsenide(GaAs) material. This calculation is being simulated using the Monte Carlo simulation, SRIM (Stopping and Range of Ions in Matter). The comparison of radiation tolerance between the conventional scale and nanoscale GaAs layer will be discussed as well. From the findings, it is observed that most of the damage formed in the GaAs layer induced by the production of lattice defects in the form of vacancies, defect clusters and dislocations. However, when the GaAs layer is scaled down (nanoscaling), it is found that the GaAs layer can withstand higher radiation energy, in term of displacement damage.