Monte Carlo study of alpha (α) particles transport in nanoscale gallium arsenide semiconductor materials

Abstract

Space and ground level electronic equipment with semiconductor devices are always subjected to the deleterious effects by radiation. The study of ion-solid interaction can show the radiation effects of scattering and stopping of high speed atomic particles when passing through matter. This study had been of theoretical interest and of practical important in these recent years, driven by the need to control material properties at nanoscale. This paper is attempted to present the calculations of final 3D distribution of the ions and all kinetic phenomena associated with the ion's energy loss: target damage, sputtering, ionization, and phonon production of alpha (α) particle in Gallium Arsenide(GaAs) material. This calculation is being simulated using the Monte Carlo simulation, SRIM (Stopping and Range of Ions in Matter). The comparison of radiation tolerance between the conventional scale and nanoscale GaAs layer will be discussed as well. From the findings, it is observed that most of the damage formed in the GaAs layer induced by the production of lattice defects in the form of vacancies, defect clusters and dislocations. However, when the GaAs layer is scaled down (nanoscaling), it is found that the GaAs layer can withstand higher radiation energy, in term of displacement damage.

Calculation of the Rate of Helium Ion Dispersion in Gallium Arsenide Compound

“…Besides, GaAs has a wide direct band gap material. Therefore, it can be used to emit light efficiently and makes them an excellent material for space and optical windows in high power application [8,9]. By the simulation of detailed calculation with full damage cascades, the plots of ion trajectories, depth vs. Y-Axis, depth vs. Z-Axis, transverse view, ionization, phonons, collision events, atom distributions and energy to recoil can be obtained.…”

Stopping Power and Range of Cesium-137 Gamma Rays in Gallium Arsenide Field Effect Transistor (GaAsFET)

“…The results obtained acquired averaging over many simulated particle trajectories [9]. The target atoms utilized in the simulation, GaAs has a band gap energy of Eg = 1.42eV at room temperature with a density of 5.316 g/cm 3 [11], [12]. In this paper, thickness of target material (GaAs) is simulated to be 700 Å (70 nm) based on commercial thickness of GaAsFET [1].…”