Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

Farahmand, M.; Garetto, C.; Bellotti, E.; Brennan, Kevin F.; Goano, Michele; Ghillino, Enrico; Ghione, Giovanni; Albrecht, John D.; Ruden, P. P.

doi:10.1109/16.906448

Cited by 409 publications

(207 citation statements)

References 59 publications

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“…Room temperature electron mobilities up to m n ¼ 900 cm 2 =V s have been measured for lowdoped GaN, which are reduced by more than one order of magnitude in highly n-doped GaN [5]. Monte Carlo simulations of various nitride alloys have recently been used to establish analytical expressions for the electron mobility as a function of doping density [6] from which the values in Table 1 are extracted. The influence of the electric field on the mobilities of electrons and holes is illustrated in Fig.…”

Section: Laser Model and Materials Parametersmentioning

confidence: 99%

Physics of high-power InGaN/GaN lasers

Piprek

Nakamura

2002

IEE Proceedings - Optoelectronics

161

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The authors analyse the performance and device physics of nitride laser diodes that exhibit the highest room-temperature continuous-wave output power. The analysis is based on advanced laser simulation. The laser model self-consistently combines band structure and freecarrier gain calculations with two-dimensional simulations of wave guiding, carrier transport and heat flux. Material parameters used in the model are carefully evaluated. Excellent agreement between simulations and measurements is achieved. The maximum output power is limited by electron leakage into the p-doped ridge. Leakage escalation is caused by strong self-heating, gain reduction and elevated carrier density within the quantum wells. Built-in polarisation fields are found to be effectively screened at high-power operation. Improved heat-sinking is predicted to allow for a significant increase of the maximum output power.

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Section: Laser Model and Materials Parametersmentioning

confidence: 99%

Physics of high-power InGaN/GaN lasers

Piprek

Nakamura

2002

IEE Proceedings - Optoelectronics

161

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“…These terms are shown in previous work to represent the dominant scattering mechanisms in III-nitride materials. 4,[26][27][28][29] It is important to note that the RTA is valid only for elastic and isotropic scattering. In particular, of the scattering mechanisms used in this work, polar optical phonon scattering violates this assumption.…”

Section: Electron Transport Modelmentioning

confidence: 99%

“…For this work, the alloy elements are assumed to be randomly distributed and s is set to one. There are a variety of different methods used to calculate the alloy scattering potential based on conduction band offsets, 1,28,33 electron affinity differences, 1,21,33 or electronegativity theory, 1,28,33,34 but there is very little agreement across different works and material systems and thus alloy scattering potential is typically used as fitting parameter to experimental data. In this work, the alloy scattering potential is obtained by fitting to experimental data when literature values are not available.…”

Section: Electron Transport Modelmentioning

confidence: 99%

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

Sztein

Haberstroh

Bowers

et al. 2013

Journal of Applied Physics

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The thermoelectric properties of III-nitride materials are of interest due to their potential use for high temperature power generation applications and the increasing commercial importance of the material system; however, the very large parameter space of different alloy compositions, carrier densities, and range of operating temperatures makes a complete experimental exploration of this material system difficult. In order to predict thermoelectric performances and identify the most promising compositions and carrier densities, the thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN are modeled. The Boltzmann transport equation is used to calculate the Seebeck coefficient, electrical conductivity, and the electron component of thermal conductivity. Scattering mechanisms considered for electronic properties include ionized impurity, alloy potential, polar optical phonon, deformation potential, piezoelectric, and charged dislocation scattering. The Callaway model is used to calculate the phonon component of thermal conductivity with Normal, Umklapp, mass defect, and dislocation scattering mechanisms included. Thermal and electrical results are combined to calculate ZT values. InxGa1−xN is identified as the most promising of the three ternary alloys investigated, with a calculated ZT of 0.85 at 1200 K for In0.1Ga0.9N at an optimized carrier density. AlxGa1−xN is predicted to have a ZT of 0.57 at 1200 K under optimized composition and carrier density. InxAl1−xN is predicted to have a ZT of 0.33 at 1200 K at optimized composition and carrier density. Calculated Seebeck coefficients, electrical conductivities, thermal conductivities, and ZTs are compared with experimental data where such data are available.

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“…[24] for GaN and In 0.125 Ga 0.875 N. The analytic AlGaN band structure is obtained from the linear interpolation between GaN and AlN properties of ref. [45].…”

Section: Theorymentioning

confidence: 99%

On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III‐N LEDs

Kivisaari

Sadi

et al. 2017

Adv Elect Materials

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of LED operation remain poorly understood, presenting an obvious bottleneck for further LED development and optimization. [5] For example, recent measurements have shown that III-N LEDs exhibit notable hot carrier distributions already close to the peak efficiency, [6][7][8][9] suggesting that hot carriers might have a more profound effect on the device characteristics than previously anticipated.To date, conventional LED simulations have mainly relied on the drift-diffusion (DD) model (see, e.g., refs. [10-13]), which cannot genuinely account for hot carriers and generally also produces larger turnon voltages for MQW LEDs than observed experimentally. [14] Many reasons have been suggested to explain this discrepancy, including charge transport through indium fluctuations, [15] V-shaped pits, [16] tunneling through traps [17] or hot carrier transport. [18] At present it is, however, unclear if the discrepancy is of a physical origin or if it arises simply because the very foundations of the widely adopted DD model make it incapable of predicting the most essential device-level characteristics of LEDs.The Monte Carlo (MC) method has been established as the standard tool to simulate hot-carrier effects in unipolar semiconductor devices such as transistors. Recently the MC method has also been expanded by Bertazzi et al. to simulate hot electron effects in GaN barriers of LEDs using full-band MC methods, [19] and ourselves, as we have recently developed a coupled Monte Carlo-drift-diffusion (MCDD) simulation method to investigate hot-electron effects in full III-N MQW LED structures. [20][21][22] More recently, we have also introduced a full MC model, [23] which can be used to carry out full MC simulations of both electrons and holes in a complete LED device. Nevertheless, the previous works have not yet provided a full analysis of the pertinent physics and differences between MC and DD. To provide more insight into the physics of MQW devices and to facilitate their further development, we now deploy our full MC simulator to answer the following questions:

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Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

Cited by 409 publications

References 59 publications

Physics of high-power InGaN/GaN lasers

Physics of high-power InGaN/GaN lasers

Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN

On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III‐N LEDs

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