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Dür, Manfred; Goodnick, Stephen M.; Lugli, Paolo

doi:10.1103/physrevb.54.17794

Cited by 54 publications

(13 citation statements)

References 31 publications

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“…In many-subband systems this is an unmanageable task and in most studies LO phonon scattering is simply left unscreened [11,12]. However, for GaN-based-heterostructures, this gives calculated mobilities below the measured ones.…”

Section: Modelmentioning

confidence: 94%

Monte Carlo study of low and high-field electron transport in GaN-based heterostructures

Thobel

Dessenne

Dalle

2014

2014 International Workshop on Computational Electronics (IWCE)

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Electron transport properties of GaN-based heterostructures are investigated by means of a Monte Carlo model, which considers a large number of subbands in several valleys. Room-temperature low-field mobility consistent with experimental results is obtained provided that screening of phonon scattering is accounted for. In intrinsic heterostructures the mobility is always greater than in bulk GaN. Dislocations strongly reduce mobility at low electron density. Transport under applied field up to 300 kV/cm is also investigated. The peak velocity is found to decrease when electron density is increased

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Section: Modelmentioning

confidence: 94%

Monte Carlo study of low and high-field electron transport in GaN-based heterostructures

Thobel

Dessenne

Dalle

2014

2014 International Workshop on Computational Electronics (IWCE)

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“…This is because the electronelectron scattering rate and the screened dielectric function are proportional to m * /ε 2 ∞ and m * /ε ∞ , respectively [33]. This is because the electronelectron scattering rate and the screened dielectric function are proportional to m * /ε 2 ∞ and m * /ε ∞ , respectively [33].…”

Section: Dephasing Time and Spectral Linewidthmentioning

confidence: 99%

“…The intrasubband LO-phonon scattering rate [28,30], the electron-electron scattering rate [33] and the ionized impurity scattering rate [33] were calculated for an Al 0.8 Ga 0.2 N/GaN (6 MLs) QW at T = 300 K [11,29]. The intrasubband LO-phonon scattering rate [28,30], the electron-electron scattering rate [33] and the ionized impurity scattering rate [33] were calculated for an Al 0.8 Ga 0.2 N/GaN (6 MLs) QW at T = 300 K [11,29].…”

Section: Dephasing Time and Spectral Linewidthmentioning

confidence: 99%

Intersubband Optical Switches for Optical Communications

Suzuki

2007

Nitride Semiconductor Devices: Principles and Simulation

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IntroductionUltrafast all-optical switches will be crucially important in future photonic networks. Semiconductor all-optical switches are superior to those based on the optical nonlinearities in optical fibers or ferroelectric materials from the viewpoints of cost, size, integration, stability, and latency. However, patterneffect-free operation above 100 Gbs −1 is extremely difficult to achieve in conventional semiconductor optical switches based on semiconductor optical amplifiers (SOAs) or electro-absorption modulators (EAMs), since the response time is limited by the carrier lifetime (>10 ps). On the other hand, the intersubband (ISB) relaxation time, which is governed by the electron scattering time due to the longitudinal-optical (LO) phonons, is less than 10 ps [1]. Therefore, pattern-effect-free Tbs −1 operation is expected in optical switches based on the saturation of ISB absorption. The near-infrared (1.3-1.55 µm) intersubband transitions (ISBT) have been realized in InGaAs-based coupled quantum wells (CQW) [2,3], CdS/ZnSe/BeTe multiple quantum wells (MQWs) [4], and GaN/Al(Ga)N MQWs [5-9]. The GaN-based ISBT switch is the fastest because of the strong Fröhlich interaction between electrons and LO phonons [10,11]. A 10-dB switching with a gate width of as short as 230 fs has been achieved in a waveguide-type GaN ISBT switch [12]. Ultrafast optical modulation corresponding to 1.5 Tbs −1 has also been demonstrated [13].In this chapter, theoretical models concerning the ISBT in nitride MQWs are described. First, the basic physics of ISBT is summarized in Section 11.2. Section 11.3 concerns the calculation of absorption spectra in GaN/AlN MQWs, where the effects of strong built-in fields (∼ MV cm −1 ) due to the piezoelectric effect and the spontaneous polarization were taken into consideration. In Section 11.4, a finite-difference time-domain (FDTD) simulator of waveguidetype GaN/AlN ISBT switches is presented.

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“…Dür et al have simulated free-electron laser ͑FEL͒ pump-probe spectroscopy in wide, uniformly doped n-type GaAs quantum wells using the ensemble Monte Carlo technique. 13 They treat scattering by LO phonons, LA phonons, and ionized impurities, as well as electron-electron scattering.…”

Section: Introductionmentioning

confidence: 99%

“…Coupled Boltzmann equations of this type are often solved using an ensemble Monte Carlo approach. [13][14][15] In this paper, however, we solve the Boltzmann equations using a numerical method that has two advantages over the ensemble Monte Carlo method: ͑i͒ The method is faster and more accurate than the conventional Monte Carlo method. ͑ii͒ The carrier distribution functions can be determined extremely accurately in the tails where the distribution can be several orders of magnitude lower than in the peaks.…”

Section: Introductionmentioning

confidence: 99%

Simulation of infrared pump-probe spectroscopy inn-type quantum wells

Sanders

Stanton

1998

Phys. Rev. B

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Picosecond free electron lasers ͑FEL͒ have been used to perform time-resolved pump-probe spectroscopy in the mid infrared. We present a Boltzmann equation formalism for modeling FEL pump-probe experiments on n-type GaAs quantum wells. We model experiments in which an FEL pump is used to promote electrons from the first subband into the second subband. In our model the photoexcited electrons are allowed to relax back to the first subband via LO optical phonon scattering, LA acoustic phonon scattering, electron-electron Coulomb scattering, and scattering by ionized impurities in the quantum well. We compute the time-dependent distribution functions for electron in each subband and from the distribution functions compute the upper state lifetime, an important parameter for device applications. ͓S0163-1829͑98͒06115-3͔

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Monte Carlo simulation of intersubband relaxation in wide, uniformly dopedGaAs/AlxGa1−x

Cited by 54 publications

References 31 publications

Monte Carlo study of low and high-field electron transport in GaN-based heterostructures

Monte Carlo study of low and high-field electron transport in GaN-based heterostructures

Intersubband Optical Switches for Optical Communications

Simulation of infrared pump-probe spectroscopy inn-type quantum wells

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