Monte Carlo simulation of ion-beam channeling in YBa2Cu3O7

Khodyrev, V.A.; Chumanov, V.Ya.; Bourdelle, K.K.; Pokhil, G. P.

doi:10.1016/0168-583x(94)95431-3

Cited by 15 publications

(3 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Barrett's approach [3], followed by later developments such as the programs FLUX [6] and UPIC [8], is based on the single-scattering model and has, consequently, its region of applicability restricted to the cases where multiple and plural scattering can be neglected. In principle, the calculation of the close-encounter probabilities in this approach bears some similarity with our procedure of shower generation.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Shower approach in the simulation of ion scattering from solids

et al. 2011

View full text Add to dashboard Cite

An efficient approach for the simulation of ion scattering from solids is proposed. For every encountered atom, we take multiple samples of its thermal displacements among those which result in scattering with high probability to finally reach the detector. As a result, the detector is illuminated by intensive "showers," where each event of detection must be weighted according to the actual probability of the atom displacement. The computational cost of such simulation is orders of magnitude lower than in the direct approach, and a comprehensive analysis of multiple and plural scattering effects becomes possible. We use this method for two purposes. First, the accuracy of the approximate approaches, developed mainly for ion-beam structural analysis, is verified. Second, the possibility to reproduce a wide class of experimental conditions is used to analyze some basic features of ion-solid collisions: the role of double violent collisions in low-energy ion scattering; the origin of the "surface peak" in scattering from amorphous samples; the low-energy tail in the energy spectra of scattered medium-energy ions due to plural scattering; and the degradation of blocking patterns in two-dimensional angular distributions with increasing depth of scattering. As an example of simulation for ions of MeV energies, we verify the time reversibility for channeling and blocking of 1-MeV protons in a W crystal. The possibilities of analysis that our approach offers may be very useful for various applications, in particular, for structural analysis with atomic resolution.

show abstract

Section: Discussionmentioning

confidence: 99%

“…This model is well tractable and serves as the basis for a large number of algorithms that have been developed (see Refs. [6][7][8] for the most widely used).…”

Section: Introductionmentioning

confidence: 99%

Shower approach in the simulation of ion scattering from solids

et al. 2011

View full text Add to dashboard Cite

show abstract

“…In order to obtain information about the charge of each atom in the molecular ion before charge equilibration takes place, the equations of motion of the atomic and molecular ions while in the crystal lattice, were solved using Monte Carlo computer simulation via a customization of the program UPIC, 40 where the mutual Coulomb interaction of the ions that constitutes the molecule, is now taken into account. 41 To simulate the ion flux behavior in channeling and in random configuration for atomic ions, the Coulomb interaction was set to zero.…”

Section: B Validation Of the Monte Carlo Simulationsmentioning

confidence: 99%

Coulomb explosion as a probe to understand the mechanism of electron stripping from ions interacting with crystalline solids

2009

View full text Add to dashboard Cite

When an ion impinges on a solid, it rapidly undergoes a process in which its electrons are stripped away provided the velocity of the orbiting electrons is smaller than the projectile speed. Electron stripping determines any posterior behavior of the ions in the solid, and it is assumed that it takes place on the surface of the solid, but no information is available on the details of the process. Here we show, using the Coulomb explosion of C 2 + ions moving in Si as a tool, that electron stripping takes place in an orderly manner and that the number of electrons stripped, before charge equilibration, depends on a characteristic length. We also propose a relation capable of quantifying this dependence. We foresee these results as a starting point to a more general understanding of ion-solid interaction, with important consequences on ion beam analysis and modification techniques, and special significance in silicon technology.

show abstract