Monte Carlo simulation of the influence of pressure and target–substrate distance on the sputtering process for metal and semiconductor layers

Bouazza, Abdelkader; Settaouti, A.

doi:10.1142/s0217984916502535

Cited by 9 publications

(5 citation statements)

References 38 publications

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“…Modern technologies and their components, such as cell phones, laptops, and smartwatches, rely on cutting-edge technology to be manufactured. Therefore, they typically require small parts obtained from miniaturized wafers using thin-film technology [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…Deposition using the sputtering approach is a complex task; it is suitable for creating a process model for acquiring the physical values of sputtering. We used a model to simulate the sputtering and transport processes, as in our previous work [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…In Ref. [1]: The simulation results obtained from a Monte Carlo code based on experimental and algorithmic calculations have been compared with those of other authors like Mahieu et al [38]. They applied a Monte Carlo code to simulate the transport of atoms in DC magnetron sputtering, studied the thickness profiles, and simulated the power and path of sputtered particles arriving at the substrate.…”

Section: Introductionmentioning

confidence: 99%

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Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality

Bouazza

2023

Rev. Mex. Fís.

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The quality of thin films represents the key to any improvement made in the device components manufacturing, and the way to obtain this quality based on deposition parameters takes the attention of our group. In this work, using the sputtering technique in the context of the Monte-Carlo approximation, an investigation of the effect of temperature and elevated pressure on the number of ejected particles and hence their deposition and the creation of finest thin films are applied. A vacuum chamber with 30x30x50 cm in dimension holding a magnetron which has a 2 cm in radius circular target was created. Inside this chamber, 105 particles of Argon (Ar) followed by the same number of xenon (Xe) gas are injected. This target moves away by 15cm from the substrate (with 7 cm in radius), containing three materials (Silicon (Si), germanium (Ge), and copper (Cu)) widely used in advanced technologies as in electronics and photovoltaic cells panels. Evident and satisfactory results were obtained, demonstrating that increasing pressure (0.5, 2, and 5 Pa) for both gases drops off in a spectacular way the total number (with different values) of the material particles reaching the substrate and disrupting the morphology of the thin films. moreover, and contrary to pressure, it has also been proved that mounting gas temperatures of 100, 300, and 600 K, representing three different states in kelvin degrees, where 100 K-173°C for the low (cold), 300 K27°C for the regular (atmospheric) and 600 K327°C for the high (warm) instances, supply a large number of materials atoms in substrate-level which conduct to the finest quality of the thin films. In addition, germanium gives the best results compared to silicon and copper.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality

Bouazza

2023

Rev. Mex. Fís.

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“…Several technologies, including the sputtering technique, can be used for producing and disposing of thin films. The properties of the films deposited by the sputtering technique depend on the material and gas used for discharge and deposition parameters such as pressure, target distance, temperature, substrate polarization and chemical composition [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Untitled

2023

Int. J. Thin.Film. Sci. Tec.

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The simulation with Monte-Carlo codes represented the efficiency tools that help understand the phenomena inside the vacuum chamber for sputtering. In this work, the impact of temperature and pressure parameters on the surface structure of thin films is studied in 3D with the magnetron sputtering technique. Inside a vacuum chamber, 105 particles of Argon (Ar) gas are injected, the target contains the semi-conductor silicon (Si), and the substrate is placed at a variable distance from the target. The results of this work show that a high temperature, pressure, and long distance between the target and substrate can negatively affect the path of the atoms ejected away from the target, which will cause a decrease in the number of atoms arriving on the substrate.

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“…To understand the phenomena in plasma and ionized gases, we need to have an exact electron swarm parameter for various electronegative gases. Therefore, considerable attention has been consecrated to studying the physical properties of this gas [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Electron swarm parameters of SF<sub>6</sub> under time varying electric fields

Settaouti

2020

IJAPE

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<span>The electron swarm parameters in gases are necessary for the simulations of plasma processes. The sulfur hexafluoride (SF6) has enormous applications suitability, because of its excellent dielectric properties, it is a gas used extensively as an insulating gas in various electric devices. Consequently, we must dedicate a significant attention to studying the physical properties of this gas. An investigation has brought into effect on the electron swarms parameters in SF6 gas in time varying electric fields using a Monte Carlo simulation. Swarm parameters as a function of instantaneous E/N (E is the electric field and N the gas number density of background gas molecules) for different dE/dt are determined.</span>

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Monte Carlo simulation of the influence of pressure and target–substrate distance on the sputtering process for metal and semiconductor layers

Cited by 9 publications

References 38 publications

Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality

Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality

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Electron swarm parameters of SF<sub>6</sub> under time varying electric fields

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