The energy and the angular distribution of atoms are considered like two parameters most influent in the optimization of the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with a Monte Carlo (MC) method is used to calculate the sputtering yield for different energies and angular distributions of atoms of metals (Cu, Al and Ag) and semiconductors (Ge, Si and Te) bombarded by different gas particles (Ar, Xe and Ne). Our results showed that when arriving at a certain energy value E_{\rm max} , sputtering yield will be in maximum Y1_{\rm max} . Applying this E_{\rm max} and with variation in the angular distribution, we will obtain \theta_{\rm max} corresponding to the maximum of sputtering yield Y2_{\rm max} . These two values ( E_{\rm max} , \theta_{\rm max} ) give the maximum of atoms sputtered and as a result, the films will be uniform. The obtained results are in very high agreement with other works, which validates our calculations.

Sputtering is characterized by a sputtering yield ratio which depends on several conditions, in particular the incident ions energy to the cathode, in normal incidence and when considers the angle α of the incident ions. Our investigations may be considered in first step to calculate the sputtering yield of three metals: copper, silver, and aluminum collide with argon, xenon, oxygen and nitrogen ions using highly developed software called SRIM (Stopping and Range of Ions in Matter) with normal incidence, then with varied angles in future works. The results obtained are compared with those obtained using the analytical models based on the Monte Carlo method proposed by researchers as Sigmund and Yamamaura in order to validate models.

The future of the industry development depends greatly on the permanently ensured energy needs and can be achieved only through the use of a variety of sustainable energy sources where the solar energy, which gains its optimal exploitation directly by linking it to the properties of solar cells and in particular to the crystallographic quality of the used semiconductor substrates, is one of them. Many growth processes are used to obtain a high quality of semiconductor formation and deposition, among them the DC sputtering. In this work, based on the Monte-Carlo method, a 3D DC sputtering simulation of the CZTS {\mathrm{CZTS}} , Si {\mathrm{Si}} and CIGS {\mathrm{CIGS}} semiconductors thin film formation is proposed by considering Argon as vacuum chamber bombardment gas. We extrapolate firstly the best sputtering yield possible of the semiconductors CZTS {\mathrm{CZTS}} and Silicon represented by their chemical formulas Cu 2 ⁢ ZnSnS 4 {\mathrm{Cu}_{2}\mathrm{Zn}\mathrm{Sn}\mathrm{S}_{4}} and Si {\mathrm{Si}} , respectively, by the application of different energies and incidence angles. From the obtained results, firstly we deduce that the best sputtering angle is 85 ∘ {85^{\circ}} ; in the same time, CZTS {\mathrm{CZTS}} is more efficient comparing to the Si {\mathrm{Si}} . Secondly, with the application of this angle ( 85 ∘ {85^{\circ}} ) in the sputtering process for the CZTS {\mathrm{CZTS}} ( Cu 2 ⁢ ZnSnS 4 {\mathrm{Cu}_{2}\mathrm{Zn}\mathrm{Sn}\mathrm{S}_{4}} ) and CIGS {\mathrm{CIGS}} represented by its chemical formula CuIn x ⁢ Ga ( 1 - x ) ⁢ Se 2 {\mathrm{Cu}\mathrm{In}_{x}\mathrm{Ga}_{(1-x)}\mathrm{Se}_{2}} , and the variation of the bombardment energy in order to find the total ejected atoms from each element of these two materials, we deduce that the sulfide ( S 4 {\mathrm{S}_{4}} ) and selenide ( Se 2 {\mathrm{Se}_{2}} ) elements give the majority of the sputtering yield amount obtained.

The energy and the number of particles arriving at the substrate during physical vapor deposition (PVD) are in close relation with divers parameters. In this work, we present the influence of the distance between the target and substrate and the gas pressure in the sputtering process of deposited layers of metals (Cu, Al and Ag) and semiconductors (Ge, Te and Si) for substrate diameter of 40 cm and target diameter of 5 cm. The nascent sputter flux, the flux of the atoms and their energy arriving at the substrate have been simulated by Monte Carlo codes. A good agreement between previous works of other groups and our simulations for sputter pressures (0.3–1 Pa) and target–substrate distances (8–20 cm) is obtained.

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