Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation

Abstract

The energy and the angular distribution of atoms are considered like two parameters most influent in the optimization of the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with a Monte Carlo (MC) method is used to calculate the sputtering yield for different energies and angular distributions of atoms of metals (Cu, Al and Ag) and semiconductors (Ge, Si and Te) bombarded by different gas particles (Ar, Xe and Ne). Our results showed that when arriving at a certain energy value E_{\rm max} , sputtering yield will be in maximum Y1_{\rm max} . Applying this E_{\rm max} and with variation in the angular distribution, we will obtain \theta_{\rm max} corresponding to the maximum of sputtering yield Y2_{\rm max} . These two values ( E_{\rm max} , \theta_{\rm max} ) give the maximum of atoms sputtered and as a result, the films will be uniform. The obtained results are in very high agreement with other works, which validates our calculations.

Investigation using Monte-Carlo codes simulations for the impact of temperatures and high pressures on thin films quality

“…In Ref. [3], the simulation results using the Monte Carlo code of the sputtering yield for metals and semiconductors were obtained by varying the energy and angles of incidence.…”

“…A surface atom is ejected if its energy exceeds its surface binding energy. To evaluate the number of atoms ejected under ion bombardment, we calculated the sputtering yield Y (E), which quantifies physical sputtering and is defined as the mean number of atoms removed from the surface of a solid per incident ion [2][3][4]52].…”

“…Modern technologies and their components, such as cell phones, laptops, and smartwatches, rely on cutting-edge technology to be manufactured. Therefore, they typically require small parts obtained from miniaturized wafers using thin-film technology [1][2][3][4][5].…”

“…Deposition using the sputtering approach is a complex task; it is suitable for creating a process model for acquiring the physical values of sputtering. We used a model to simulate the sputtering and transport processes, as in our previous work [1][2][3][4][5].…”

Electron swarm parameters of SF₆ under time varying electric fields

“…The Monte Carlo technique is the better method for having an excellent description of the particle's kinetics in the electrical discharges and plasma. This method of simulation simulates the realistic physical processes in electrical discharges and plasma and describes the temporal and spatial evolutions of particles [11][12][13]. The swarm parameters of the charged particles used for the electrical discharge and plasma applications are deduced theoretically and experimentally under the static electric fields.…”