Monte Carlo Simulations of High-Speed InSb–InAlSb FETs

Herbert, D C; Childs, P. A.; Abram, R. A.; Crow, G.C.; Walmsley, M.

doi:10.1109/ted.2005.848115

Cited by 15 publications

(15 citation statements)

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“…High-speed devices e.g., InSb FETs operating at room temperature have been successfully fabricated for large gate structures [2]- [4] and Monte Carlo (MC) simulations have indicated that very high speed performance is possible for short gate structures [5]. The unusually high electron drift velocity of InSb results from impact ionization cooling the electrons within the valley and leads to the exceptional high speed potential [5]. In this paper, we explore the possibilities for avalanche photodiode (APD) devices.…”

Section: Self-consistent 2-d Monte Carlo Simulations Of Insb Apd I Imentioning

confidence: 99%

“…The lower value of S = 3 2 10 estimated from first principles [14] leads to a strong negative differential mobility caused by transfer of electrons to the X valley and a much lower saturated velocity. coefficients and velocity field characteristics for InSb together with details of the simulation techniques have been presented previously [5] and are used unchanged in this paper. For convenience, the ionization coefficients are reproduced in Fig.…”

Section: Self-consistent 2-d Monte Carlo Simulations Of Insb Apd I Imentioning

confidence: 99%

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Self-Consistent 2-D Monte Carlo Simulations of InSb APD

Herbert¹,

Childs²,

Abram

et al. 2005

IEEE Trans. Electron Devices

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Section: Self-consistent 2-d Monte Carlo Simulations Of Insb Apd I Imentioning

confidence: 99%

Section: Self-consistent 2-d Monte Carlo Simulations Of Insb Apd I Imentioning

confidence: 99%

Self-Consistent 2-D Monte Carlo Simulations of InSb APD

Herbert¹,

Childs²,

Abram

et al. 2005

IEEE Trans. Electron Devices

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“…It has been proposed elsewhere that this mechanism will cause catastrophic device failure, as the positive feedback drives the device into breakdown. 3 However, there are two limiting factors for this mechanism. Firstly, the reduction in the gate potential means that there is a corresponding increase in hole current that drifts back to the source region.…”

Section: Discussion and Device Modelingmentioning

confidence: 99%

“…Among such materials InSb shows considerable promise because of its extremely high electron mobility and saturation velocity. [1][2][3] The low effective mass and narrow band gap of these materials, however, also introduce a susceptibility to impact ionization-related effects that manifest themselves as an increased output conductance, often referred to as the "kink effect," due to the increase in drain current observable in the output characteristic [4][5][6] giving rise to a conductance kink. Such an effect has been observed in a number of heterostructure systems, with a level of severity that can limit the usefulness of the device.…”

Section: Introductionmentioning

confidence: 99%

Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors

Orr

Buckle

Fearn

et al. 2006

Journal of Applied Physics

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The observation of a kink effect in the output characteristic of an InSb/ AlInSb quantum well field effect transistor structure at low temperature ͑1.6 K͒ is reported. The effect is strongly temperature dependent, and while just discernible at room temperature, it is greatly enhanced below ϳ120 K. At 1.6 K strong hysteresis is observed in the ͑output͒ forward characteristic of the device when sweeping the drain bias up and down. Corresponding instability is also observed in the gate leakage current as a function of gate voltage. We explain the effect by comparing with Monte Carlo simulations, observing strong hole accumulation under the gate region of the device as a result of significant impact ionization in the drain region. This accumulation is enhanced compared to the more common InAs/ AlSb type II system, due to the fact that InSb/ AlInSb has a type I band alignment. This inhibits the loss of holes to the gate contact, a significant leakage mechanism in type II systems. We show that the extent of the hysteresis is a good measure of the charge accumulation under the gate region and estimate accumulation by examination of the hysteresis compared with the results of the Monte Carlo simulation.

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“…InAsSb is used in low power, high frequency applications in long-wave and mid-wave infrared region. InAsSb has some advantages over other materials such as its narrow band gap, availability of high quality, low cost substrates, and high electron mobility [5,[11][12][13].…”

Section: Introductionmentioning

confidence: 99%