Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding analysis. In this paper, the energy band structure and conductance of graphene nanoribbons and metal/semiconductor junctions are obtained using a third nearest-neighbour tight binding analysis in conjunction with an efficient nonequilibrium Green's function formalism. We find significant differences in both the energy band structure and conductance obtained with the two approximations.

Gold nanoclusters, chemically passivated with decanethiol, have been deposited from solution onto silicon dioxide surfaces prepatterned by photolithography. After lift-off of the photoresist, preferential cluster accumulation is observed along the edges of the resist structures. Elsewhere on the hydrophilic surface, islands of clusters are observed. By contrast, HF treatment, creating a hydrophobic surface, leads to wetting of the unmasked regions of the substrate by the passivated clusters.

simulations of high-speed InSb-InAlSb FETs.', IEEE transactions on electron devices., 52 (6). pp. 1072-1078. Further information on publisher's website:http://dx.doi.org/10.1109/TED. 2005.848115 Publisher's copyright statement:Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

In this article a technique is described for solving the one-dimensional spatially dependent Boltzmann transport equation with electron–electron interactions included in the scattering model. The analysis is illustrated by solving the Boltzmann transport equation over a potential profile typical of that found in the channel of a metal–oxide–semiconductor field-effect transistor. A comparison is made between the distribution functions obtained when electron–electron interactions are included and excluded from the scattering model. It is found that electron–electron interactions significantly increase the electron population at energies greater than are available from the electric field.

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